SI4413CDY-T1-GE3

SI4413CDY-T1-GE3
Mfr. #:
SI4413CDY-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SI4413CDY-T1-GE3 数据表
交货:
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ECAD Model:
更多信息:
SI4413CDY-T1-GE3 更多信息
产品属性
属性值
制造商
威世
产品分类
FET - 单
打包
卷轴
部分别名
SI4413CDY-GE3
单位重量
0.017870 oz
包装盒
SO-8
技术
通道数
1 Channel
晶体管型
1 P-Channel
钯功耗
3 W
Id 连续漏极电流
9 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
9.5 mOhms
晶体管极性
P-通道
Tags
SI4413C, SI4413, SI441, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
MOSFET P-CH 30V 8-SOIC
***et
P-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-15000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8613
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4413CDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.8439
  • 5000:$0.8189
  • 10000:$0.7849
  • 15000:$0.7639
  • 25000:$0.7429
SI4413CDY-T1-GE3
DISTI # 781-SI4413CDY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 15A 3.0W 7.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$0.7840
  • 5000:$0.7550
  • 10000:$0.7250
图片 型号 描述
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3

MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-E3

Mfr.#: SI4413CDY-T1-E3

OMO.#: OMO-SI4413CDY-T1-E3-1190

全新原装
SI4413CDY-T1-G

Mfr.#: SI4413CDY-T1-G

OMO.#: OMO-SI4413CDY-T1-G-1190

全新原装
可用性
库存:
Available
订购:
5500
输入数量:
SI4413CDY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.09
US$1.09
10
US$1.03
US$10.33
100
US$0.98
US$97.88
500
US$0.92
US$462.20
1000
US$0.87
US$870.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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