SI3851DV-T1-GE3

Mfr. #:: SI3851DV-T1-GE3
制造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SI3851DV-T1-GE3 数据表
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更多信息:: SI3851DV-T1-GE3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 集成电路芯片

打包: 卷轴

部分别名: SI3851DV-GE3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: TSOP-6

技术: 硅

通道数: 1 Channel

配置: 单用肖特基二极管

晶体管型: 1 P-Channel

钯功耗: 830 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 1.6 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 200 mOhms

晶体管极性: P-通道

Tags: SI3851DV-T, SI3851, SI385, SI38, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3851DV-T1-GE3 描述

***et: P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE

***ment14 APAC: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V

***ark: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes

SI3851DV-T1-GE3 更多信息

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

型号	制造商	描述	库存	价格
SI3851DV-T1-GE3 DISTI # SI3851DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3629 6000:$0.3529 12000:$0.3379 18000:$0.3289 30000:$0.3199
SI3851DV-T1-GE3 DISTI # 781-SI3851DV-GE3	Vishay Intertechnologies	MOSFET 30V 1.8A 1.15W 200mohm @ 10V RoHS: Compliant	0	3000:$0.3500 6000:$0.3330 9000:$0.3210 24000:$0.3100

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