APT60GA60JD60

APT60GA60JD60
Mfr. #:
APT60GA60JD60
制造商:
Microchip / Microsemi
描述:
IGBT Modules
生命周期:
制造商新产品。
数据表:
APT60GA60JD60 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
美高森美公司
产品分类
IGBT - 模块
系列
POWER MOS 8
产品
IGBT 硅模块
单位重量
1.058219 oz
安装方式
拧紧
商品名
POWER MOS 8 ISOTOP
包装盒
SOT-227-4, miniBLOC
安装型
底盘安装
供应商-设备-包
ISOTOPR
输入
标准
配置
单身的
最大功率
356W
电流收集器 Ic-Max
112A
电压收集器发射极击穿最大值
600V
电流收集器截止最大值
275μA
IGBT型
PT
Vce-on-Max-Vge-Ic
2.5V @ 15V, 62A
输入电容Cies-Vce
8.01nF @ 25V
NTC-热敏电阻
钯功耗
356 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
600 V
集电极-发射极-饱和-电压
2 V
25-C 时的连续集电极电流
112 A
栅极-发射极-漏电流
100 nA
最大栅极发射极电压
+/- 30 V
Tags
APT60G, APT60, APT6, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 112A 356000mW 4-Pin SOT-227
***p One Stop Global
Trans IGBT Chip N-CH 600V 112A 4-Pin SOT-227
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
***i-Key
IGBT 600V 112A 356W SOT-227
***hardson RFPD
POWER IGBT TRANSISTOR
型号 制造商 描述 库存 价格
APT60GA60JD60
DISTI # APT60GA60JD60-ND
Microsemi CorporationIGBT 600V 112A 356W SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 100:$26.1442
  • 30:$28.1297
  • 10:$30.6120
  • 1:$33.0900
APT60GA60JD60
DISTI # 494-APT60GA60JD60
Microsemi CorporationIGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant
0
  • 1:$30.8900
  • 5:$29.5000
  • 10:$28.5800
  • 25:$26.2600
  • 50:$25.4700
APT60GA60JD60
DISTI # APT60GA60JD60
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
  • 17:$20.6600
  • 100:$20.1500
  • 500:$19.8900
图片 型号 描述
APT60GF120JRDQ3

Mfr.#: APT60GF120JRDQ3

OMO.#: OMO-APT60GF120JRDQ3

IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227
APT60GA60JD60

Mfr.#: APT60GA60JD60

OMO.#: OMO-APT60GA60JD60

IGBT Modules FG, IGBT-COMBI, 600V, SOT-227
APT60GT60BRG

Mfr.#: APT60GT60BRG

OMO.#: OMO-APT60GT60BRG

IGBT Transistors FG, IGBT, 600V, 60A, TO-247, RoHS
APT60GA60JD60

Mfr.#: APT60GA60JD60

OMO.#: OMO-APT60GA60JD60-MICROSEMI

IGBT Modules
APT60GF60JU2

Mfr.#: APT60GF60JU2

OMO.#: OMO-APT60GF60JU2-MICROSEMI

IGBT Modules
APT60GT60BRG

Mfr.#: APT60GT60BRG

OMO.#: OMO-APT60GT60BRG-MICROSEMI

IGBT Transistors
APT60GF120JDR

Mfr.#: APT60GF120JDR

OMO.#: OMO-APT60GF120JDR-1190

全新原装
APT60GT120JRD

Mfr.#: APT60GT120JRD

OMO.#: OMO-APT60GT120JRD-1190

全新原装
APT60GT60JRD

Mfr.#: APT60GT60JRD

OMO.#: OMO-APT60GT60JRD-1190

POWER IGBT TRANSISTOR
APT60GT60JRDX

Mfr.#: APT60GT60JRDX

OMO.#: OMO-APT60GT60JRDX-1190

全新原装
可用性
库存:
Available
订购:
2000
输入数量:
APT60GA60JD60的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$28.96
US$28.96
10
US$27.52
US$275.17
100
US$26.07
US$2 606.85
500
US$24.62
US$12 310.15
1000
US$23.17
US$23 172.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
最新产品
Top