BSM100GD120DN2

Mfr. #:: BSM100GD120DN2
制造商:: Infineon Technologies
描述:: IGBT Modules 1200V 100A FL BRIDGE
生命周期:: 制造商新产品。
数据表:: BSM100GD120DN2 数据表
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ECAD Model:

产品属性
属性值

制造商: 欧佩克

产品分类: 模块

产品: IGBT 硅模块

安装方式: 拧紧

包装盒: EconoPACK 3A

配置: 十六进制

钯功耗: 680 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.5 V

25-C 时的连续集电极电流: 150 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: 20 V

Tags: BSM100GD120DN, BSM100GD1, BSM100GD, BSM100G, BSM100, BSM10, BSM1, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM100GD120DN2 描述

***omponent: IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)

***ser: IGBT - Standard Modules 1200V,100A,FL BRIDGE

***nell: IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:100A; Voltage, Vce sat max:3V; Power dissipation:680W; Case style:Econopack 3; Current, Icm pulsed:200A; Power, Pd:680W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V

Market price

型号	制造商	描述	库存	价格
BSM100GD120DN2BOSA1 DISTI # BSM100GD120DN2BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO3-1 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$243.8110
BSM100GD120DN2 DISTI # SP000100365	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 100A nom FL Bridge (Alt: SP000100365) RoHS: Compliant Min Qty: 1	Europe - 0	1:€233.9900 10:€227.0900 25:€224.5900 50:€213.3900 100:€209.6900 500:€207.2900 1000:€204.3900
BSM100GD120DN2BOSA1 DISTI # BSM100GD120DN2BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 100A nom FL Bridge - Trays (Alt: BSM100GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$245.9900 20:$237.0900 40:$228.4900 60:$220.7900 100:$216.8900
BSM100GD120DN2 DISTI # 641-BSM100GD120DN2	Infineon Technologies AG	IGBT Modules 1200V 100A FL BRIDGE RoHS: Compliant	0
BSM100GD120DN2	Infineon Technologies AG		3
BSM100GD120DN2 DISTI # IGBT1897	Infineon Technologies AG	2-SWITCH 1200V 100A Econo 3 RoHS: Compliant	Stock DE - 0Stock US - 0	10:$291.0800 20:$268.6800
BSM100GD120DN2 DISTI # 1496950	Infineon Technologies AG	RoHS: Compliant	0	1:$391.7300 5:$382.3000

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