IPB024N08N5ATMA1

Mfr. #:: IPB024N08N5ATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH 80V TO263-3
生命周期:: 制造商新产品。
数据表:: IPB024N08N5ATMA1 数据表
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更多信息:: IPB024N08N5ATMA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

部分别名: IPB024N08N5 SP001227044

单位重量: 0.139332 oz

安装方式: 贴片/贴片

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 214 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 14 ns

VGS-栅极-源极-电压: +/- 20 V

Id 连续漏极电流: 120 A

Vds-漏-源-击穿电压: 80 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 3.1 mOhms

晶体管极性: N通道

典型关断延迟时间: 46 ns

典型开启延迟时间: 22 ns

Qg-门电荷: 99 nC

正向跨导最小值: 89 S

通道模式: 增强

Tags: IPB024, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB024N08N5ATMA1 描述

***ical: Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R

***ronik: N-CH 80V 120A 2,4mOhm TO263-3

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB024N08N5ATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

型号	制造商	描述	库存	价格
IPB024N08N5ATMA1 DISTI # V72:2272_06378736	Infineon Technologies AG	Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	970	500:$2.2230 250:$2.4810 100:$2.6240 25:$3.0160 10:$3.0480 1:$3.5490
IPB024N08N5ATMA1 DISTI # IPB024N08N5ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$2.2392
IPB024N08N5ATMA1 DISTI # 27074090	Infineon Technologies AG	Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.9584
IPB024N08N5ATMA1 DISTI # 26195054	Infineon Technologies AG	Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	970	500:$2.2230 250:$2.4810 100:$2.6240 25:$3.0160 10:$3.0480 4:$3.5490
IPB024N08N5ATMA1 DISTI # IPB024N08N5ATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPB024N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.9900 2000:$1.9900 4000:$1.8900 6000:$1.7900 10000:$1.7900
IPB024N08N5ATMA1 DISTI # SP001227044	Infineon Technologies AG	MV POWER MOS (Alt: SP001227044) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.8900 2000:€1.7900 4000:€1.7900 6000:€1.5900 10000:€1.4900
IPB024N08N5ATMA1 DISTI # IPB024N08N5	Infineon Technologies AG	MV POWER MOS (Alt: IPB024N08N5) RoHS: Compliant Min Qty: 1000	Asia - 0	1000:$2.0771 2000:$2.0194 3000:$1.9649 5000:$1.9132 10000:$1.8883 25000:$1.8641 50000:$1.8405
IPB024N08N5ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1900	1000:$1.7500 500:$1.8400 100:$1.9200 25:$2.0000 1:$2.1500
IPB024N08N5ATMA1 DISTI # 726-IPB024N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 RoHS: Compliant	943	1:$3.8500 10:$3.2800 100:$2.8400 250:$2.7000 500:$2.4200

IPB024N08N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes