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CSD19535KCS

CSD19535KCS
Mfr. #:
CSD19535KCS
描述:
MOSFET 100V N-CH NexFET Pwr MOSFET
生命周期:
制造商新产品。
数据表:
CSD19535KCS 数据表
交货:
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支付:
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ECAD Model:
更多信息:
CSD19535KCS 更多信息 CSD19535KCS Product Details
产品属性
属性值
制造商：
德州仪器
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
187 A
Rds On - 漏源电阻：
3.6 mOhms
Vgs th - 栅源阈值电压：
2.2 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
78 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
300 W
配置：
单身的
频道模式：
增强
商品名：
场效应管
打包：
管子
高度：
16.51 mm
长度：
10.67 mm
系列：
CSD19535KCS
晶体管类型：
1 N-Channel
宽度：
4.7 mm
品牌：
德州仪器
正向跨导 - 最小值：
274 S
秋季时间：
5 ns
产品类别：
MOSFET
上升时间：
15 ns
出厂包装数量：
50
子类别：
MOSFET
典型关断延迟时间：
60 ns
典型的开启延迟时间：
32 ns
单位重量：
0.211644 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single TO-220, 3.6mOhm 3-TO-220 -55 to 175
***Components
In a Pack of 2, CSD19535KCS N-Channel MOSFET, 187 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments
***ical
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube
***p One Stop Global
Trans MOSFET N-CH 100V 150A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 100V 150A 3-Pin TO-220
***ark
Mosfet, N Channel, 100V, 150A, To-220-3
***i-Key
MOSFET N-CH 100V TO-220
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 100V, 150A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V, 150A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:150A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0031ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.7V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***NS
This 100 V, 3.1 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD19535KCS
DISTI # 296-37288-5-ND		MOSFET N-CH 100V TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		6202In Stock
  • 2500:$1.6020
  • 1000:$1.6863
  • 500:$1.9995
  • 100:$2.4692
  • 50:$2.7102
  • 10:$3.0110
  • 1:$3.3700
CSD19535KCS
DISTI # CSD19535KCS		Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19535KCS)
RoHS: Compliant
Min Qty: 1		Europe - 350
  • 1:€3.7392
  • 10:€2.6562
  • 100:€2.3028
  • 250:€2.1774
  • 500:€1.5960
CSD19535KCS
DISTI # CSD19535KCS		Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19535KCS)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    CSD19535KCS
    DISTI # CSD19535KCS    		Trans MOSFET N-CH 100V 150A 3-Pin TO-220 - Rail/Tube (Alt: CSD19535KCS)
    RoHS: Compliant
    Min Qty: 250
    Container: Tube    		Americas - 0
    • 250:$1.4900
    • 350:$1.4900
    • 600:$1.3900
    • 1250:$1.3900
    • 2500:$1.2900
    CSD19535KCS100V, N-Channel NexFET&#153,Power MOSFET4809
    • 1000:$1.2400
    • 750:$1.3000
    • 500:$1.5400
    • 250:$1.8200
    • 100:$1.9400
    • 25:$2.2100
    • 10:$2.3800
    • 1:$2.6400
    CSD19535KCS
    DISTI # 595-CSD19535KCS    		MOSFET 100V N-CH NexFET Pwr MOSFET
    RoHS: Compliant    		1356
    • 1:$2.9000
    • 10:$2.6100
    • 100:$2.1300
    • 250:$2.0000
    • 500:$1.8100
    • 1000:$1.5300
    CSD19535KCSPower Field-Effect Transistor, 150A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
    RoHS: Compliant    		109087
    • 1000:$1.6200
    • 500:$1.7000
    • 100:$1.7700
    • 25:$1.8500
    • 1:$1.9900
    CSD19535KCS
    DISTI # 8274915P    		MOSFET N-CHANNEL 100V 150A NEXFET TO-220, TU24
    • 50:£1.8900
    • 100:£1.5500
    • 250:£1.4600
    • 500:£1.3150
    CSD19535KCS
    DISTI # CSD19535KCS    		Transistor: N-MOSFET,unipolar,100V,150A,300W,TO220-334
    • 1:$3.3400
    • 3:$3.0100
    • 10:$2.6600
    • 50:$2.3900
    • 250:$2.2300
    CSD19535KCS.
    DISTI # 2413259    		MOSFET, N-CH, 100V, 150A, TO-220-3
    RoHS: Compliant    		0
    • 250:£2.2400
    CSD19535KCS
    DISTI # 2419497    		MOSFET, N CHANNEL, 100V, 150A, TO-220-3
    RoHS: Compliant    		0
    • 1:$4.5900
    • 10:$4.1300
    • 100:$3.3900
    • 250:$3.1900
    • 500:$2.8800
    • 1000:$2.4400
    CSD19535KCS.
    DISTI # 2413259    		MOSFET, N-CH, 100V, 150A, TO-220-3
    RoHS: Compliant    		0
    • 1:$4.3200
    • 10:$3.7800
    • 25:$3.2900
    • 100:$3.0200
    • 250:$2.7000
    • 500:$2.4400
    • 1000:$2.2600
    • 2500:$2.1900
    图片 型号 描述
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    Mfr.#: BAV99WT1G

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    Mfr.#: LM317MDCYR

    OMO.#: OMO-LM317MDCYR

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    Mfr.#: 150060GS75000

    OMO.#: OMO-150060GS75000

    		 Standard LEDs - SMD WL-SMCW SMDMono TpVw Waterclr 0603 Green
    AS12J1R00ET

    Mfr.#: AS12J1R00ET

    OMO.#: OMO-AS12J1R00ET

    		 Thick Film Resistors - SMD 500mW 1 OHM 5% ANTI SURGE
    RC0603FR-07953KL

    Mfr.#: RC0603FR-07953KL

    OMO.#: OMO-RC0603FR-07953KL

    		 Thick Film Resistors - SMD 953K OHM 1%
    AS12J1R00ET

    Mfr.#: AS12J1R00ET

    OMO.#: OMO-AS12J1R00ET-OHMITE

    		 0.75W 1 OHM 5% ANTI SURGE
    OPA2333AID

    Mfr.#: OPA2333AID

    OMO.#: OMO-OPA2333AID-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps 1.8V 17uA 2uV microPOWER CMOS
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    CSD19535KCS的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.90
    US$2.90
    10
    US$2.61
    US$26.10
    100
    US$2.13
    US$213.00
    250
    US$2.00
    US$500.00
    500
    US$1.81
    US$905.00
    1000
    US$1.53
    US$1 530.00
    2500
    US$1.45
    US$3 625.00
    5000
    US$1.40
    US$7 000.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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