CSD17553Q5A

Mfr. #:: CSD17553Q5A
描述:: MOSFET N-CH 30V 23.5A 8SON
生命周期:: 制造商新产品。
数据表:: CSD17553Q5A 数据表
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更多信息:: CSD17553Q5A 更多信息 CSD17553Q5A Product Details

产品属性
属性值

制造商: TI

产品分类: FET - 单

系列: CSD17553Q5A

打包: 卷轴

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: VSON-FET-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 3.1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 23.5 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 4 mOhms

晶体管极性: N通道

Qg-门电荷: 17.5 nC

Tags: CSD1755, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17553Q5A 描述

***as Instruments: N-Channel NexFET Power MOSFET, CSD17553Q5A 8-VSONP -55 to 150

***p One Stop Global: Trans MOSFET N-CH 30V 23.5A 8-Pin VSONP EP T/R

***et Europe: Trans MOSFET N-CH 30V 23.5A 8-Pin SON EP T/R

***Components: MOSFET N-Channel 30V 23.5A NexFET SON8EP

***i-Key: MOSFET N-CH 30V 23.5A 8SON

***ark: Nrnd Use Csd17581q5a

CSD17553Q5A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD17553Q5A DISTI # 296-30602-1-ND	MOSFET N-CH 30V 23.5A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5795In Stock	1000:$0.7172 500:$0.9084 100:$1.1714 10:$1.4820 1:$1.6700
CSD17553Q5A DISTI # 296-30602-6-ND	MOSFET N-CH 30V 23.5A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5795In Stock	1000:$0.7172 500:$0.9084 100:$1.1714 10:$1.4820 1:$1.6700
CSD17553Q5A DISTI # 296-30602-2-ND	MOSFET N-CH 30V 23.5A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	5000:$0.6174 2500:$0.6499
CSD17553Q5A DISTI # CSD17553Q5A	Trans MOSFET N-CH 30V 23.5A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17553Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6119 5000:$0.5819 10000:$0.5629 15000:$0.5439 25000:$0.5289
CSD17553Q5A DISTI # CSD17553Q5A	Trans MOSFET N-CH 30V 23.5A 8-Pin SON EP T/R (Alt: CSD17553Q5A) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.8509 10:€0.7659 25:€0.6959 50:€0.6379 100:€0.5889 500:€0.5469 1000:€0.5099
CSD17553Q5A	N-Channel NexFET Power MOSFET, CSD17553Q5A	5000	1000:$0.4800 750:$0.5400 500:$0.6700 250:$0.8200 100:$0.8900 25:$1.0400 10:$1.1300 1:$1.2600
CSD17553Q5A DISTI # 595-CSD17553Q5A	MOSFET NCh NexFET Pwr MOSFET RoHS: Compliant	2108	1:$1.3900 10:$1.1900 100:$0.9080 500:$0.8020 1000:$0.6330

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