BSM180D12P2C101

Mfr. #:: BSM180D12P2C101
制造商:: Rohm Semiconductor
描述:: Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
生命周期:: 制造商新产品。
数据表:: BSM180D12P2C101 数据表
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ECAD Model:
更多信息:: BSM180D12P2C101 更多信息

产品属性
属性值

制造商: 罗门半导体

产品分类: FET - 阵列

系列: BSM180D12P2C101

产品: 功率半导体模块

类型: 碳化硅功率模块

打包: 大部分

安装方式: 拧紧

工作温度范围: - 40 C to + 150 C

包装盒: 模块

工作温度: -40°C ~ 150°C (TJ)

安装型: *

供应商-设备-包: 模块

配置: 半桥

FET型: 2 N-Channel (Half Bridge)

最大功率: 1130W

漏源电压 Vdss: 1200V (1.2kV)

输入电容-Ciss-Vds: 23000pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 180A

Rds-On-Max-Id-Vgs: -

Vgs-th-Max-Id: 4V @ 35.2mA

栅极电荷-Qg-Vgs: -

Tags: BSM180D, BSM180, BSM18, BSM1, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM180D12P2C101 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SiC Power Modules: ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Market price

型号	制造商	描述	库存	价格
BSM180D12P2C101 DISTI # BSM180D12P2C101-ND	ROHM Semiconductor	MOSFET 2N-CH 1200V 180A MODULE RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	10:$418.8610 1:$434.9700
BSM180D12P2C101 DISTI # BSM180D12P2C101	ROHM Semiconductor	Trans SiC MOSFET N-CH 1.2KV 180A 10-Pin Case C Tray - Bulk (Alt: BSM180D12P2C101) RoHS: Compliant Min Qty: 12 Container: Bulk	Americas - 3	12:$463.3900 24:$434.4900 48:$408.9900 72:$386.3900 120:$375.9900
BSM180D12P2C101 DISTI # 755-BSM180D12P2C101	ROHM Semiconductor	Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) RoHS: Compliant	0	1:$434.9700 5:$418.8700
BSM180D12P2C101 DISTI # 2345471	ROHM Semiconductor	MODULE, POWER, SIC, 1200V, 180A RoHS: Compliant	1	1:£379.0000

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