BSZ110N06NS3GATMA1

Mfr. #:: BSZ110N06NS3GATMA1
制造商:: Infineon Technologies
描述:: MOSFET MV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSZ110N06NS3GATMA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TSDSON-8

商品名：: 优化MOS

打包：: 卷轴

高度：: 1.1 mm

长度：: 3.3 mm

宽度：: 3.3 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSZ110N06NS3 BSZ11N6NS3GXT G SP000453676

Tags: BSZ110N06, BSZ110, BSZ11, BSZ1, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ110N06NS3GATMA1 描述

***ure Electronics: Single N-Channel 60 V 11 mOhm 25 nC OptiMOS Power Mosfet - TSDSON-8

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TSDSON-8, RoHS

***nell: MOSFET, N-CH, 60V, 20A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

型号	制造商	描述	库存	价格
BSZ110N06NS3GATMA1 DISTI # V72:2272_06384842	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	4603	3000:$0.3290 1000:$0.3323 500:$0.4018 250:$0.4860 100:$0.5582 25:$0.7055 10:$0.7762 1:$0.9006
BSZ110N06NS3GATMA1 DISTI # V36:1790_06384842	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000:$0.2475
BSZ110N06NS3GATMA1 DISTI # BSZ110N06NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	35989In Stock	1000:$0.3677 500:$0.4596 100:$0.5815 10:$0.7580 1:$0.8600
BSZ110N06NS3GATMA1 DISTI # BSZ110N06NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	35989In Stock	1000:$0.3677 500:$0.4596 100:$0.5815 10:$0.7580 1:$0.8600
BSZ110N06NS3GATMA1 DISTI # BSZ110N06NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	35000In Stock	25000:$0.2826 10000:$0.2901 5000:$0.3012
BSZ110N06NS3GATMA1 DISTI # 32333510	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	20000	5000:$0.2336
BSZ110N06NS3GATMA1 DISTI # 32918006	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.3767
BSZ110N06NS3GATMA1 DISTI # 31029269	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	4603	3000:$0.3290 1000:$0.3323 500:$0.4018 250:$0.4860 100:$0.5582 30:$0.7055
BSZ110N06NS3GATMA1 DISTI # BSZ110N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R - Bulk (Alt: BSZ110N06NS3GATMA1) Min Qty: 1471 Container: Bulk	Americas - 0	14710:$0.2159 7355:$0.2189 4413:$0.2269 2942:$0.2359 1471:$0.2439
BSZ110N06NS3GATMA1 DISTI # SP000453676	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R (Alt: SP000453676) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.2149 30000:€0.2319 20000:€0.2509 10000:€0.2739 5000:€0.3349
BSZ110N06NS3GATMA1 DISTI # 47W3364	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R - Bulk (Alt: 47W3364) RoHS: Compliant Min Qty: 5 Container: Bulk	Americas - 0
BSZ110N06NS3GXT DISTI # BSZ110N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2159 30000:$0.2189 20000:$0.2269 10000:$0.2359 5000:$0.2439
BSZ110N06NS3GATMA1 DISTI # 47W3364	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2958	1:$0.2360 10:$0.2360 100:$0.2360 500:$0.2360 1000:$0.2360
BSZ110N06NS3 G DISTI # 726-BSZ110N06NS3G	Infineon Technologies AG	MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 RoHS: Compliant	21729	1:$0.7900 10:$0.6590 100:$0.4250 1000:$0.3400 5000:$0.2870 10000:$0.2770 25000:$0.2660
BSZ110N06NS3GATMA1	Infineon Technologies AG	Single N-Channel 60 V 11 mOhm 25 nC OptiMOS Power Mosfet - TSDSON-8 RoHS: Not Compliant	5000Reel	5000:$0.2150
BSZ110N06NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	448	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
BSZ110N06NS3GATMA1 DISTI # 8235724P	Infineon Technologies AG	MOSFET N-CH 60V 20A OPTIMOS3 TSDSON8EP, RL	8360	5000:£0.2060 2500:£0.2440 200:£0.3050 50:£0.3880
BSZ110N06NS3GATMA1 DISTI # 2212843	Infineon Technologies AG	MOSFET, N-CH, 60V, 20A, 8TSDSON	7117	500:£0.2860 250:£0.3080 100:£0.3300 10:£0.5640 1:£0.7040
BSZ110N06NS3GATMA1 DISTI # 2212843	Infineon Technologies AG	MOSFET, N-CH, 60V, 20A, 8TSDSON RoHS: Compliant	6469	1000:$0.5230 100:$0.6530 10:$1.0200 1:$1.2200
BSZ110N06NS3GATMA1 DISTI # XSFP00000040988	Infineon Technologies AG	Single P-Channel 250 V 12 Ohm 4.3 nCSIPMOSSmallSignal Mosfet - SOT-223 RoHS: Compliant	10000 in Stock0 on Order	10000:$0.2867 5000:$0.3071

图片	型号	描述
	Mfr.#: BSZ110N06NS3 G OMO.#: OMO-BSZ110N06NS3-G	MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ110N06NS3GATMA1 OMO.#: OMO-BSZ110N06NS3GATMA1	MOSFET MV POWER MOS
	Mfr.#: BSZ110N06NS3GXT OMO.#: OMO-BSZ110N06NS3GXT-1190	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1)
	Mfr.#: BSZ110N06NS3G OMO.#: OMO-BSZ110N06NS3G-1190	全新原装
	Mfr.#: BSZ110N06NS3GATMA1-CUT TAPE OMO.#: OMO-BSZ110N06NS3GATMA1-CUT-TAPE-1190	全新原装
	Mfr.#: BSZ110N06NS3GATMA1 OMO.#: OMO-BSZ110N06NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 20A TSDSON-8
	Mfr.#: BSZ110N06NS3 G OMO.#: OMO-BSZ110N06NS3-G-126	IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3

BSZ110N06NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes