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IRF6716MTR1PBF

IRF6716MTR1PBF
Mfr. #:
IRF6716MTR1PBF
制造商:
Infineon / IR
描述:
MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
生命周期:
制造商新产品。
数据表:
IRF6716MTR1PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6716MTR1PBF DatasheetIRF6716MTR1PBF Datasheet (P4-P6)IRF6716MTR1PBF Datasheet (P7-P9)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
DirectFET-MX
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
25 V
Id - 连续漏极电流：
39 A
Rds On - 漏源电阻：
2.6 mOhms
Vgs - 栅源电压：
20 V
Qg - 门电荷：
39 nC
Pd - 功耗：
78 W
配置：
单身的
打包：
卷轴
高度：
0.7 mm
长度：
6.35 mm
晶体管类型：
1 N-Channel
宽度：
5.05 mm
品牌：
英飞凌/红外
湿气敏感：
是的
产品类别：
MOSFET
出厂包装数量：
1000
子类别：
MOSFET
第 # 部分别名：
SP001532376
Tags
IRF6716M, IRF6716, IRF671, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 25V, RDS(ON) 1.3 mOhm, ID 24A, DirectFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:34A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:270A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.4V
***ical
Trans MOSFET N-CH 25V 36A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N-CH, 25V, DIRECTFETMX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:36A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:300A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ical
Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
***(Formerly Allied Electronics)
A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
***ark
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
***ical
Trans MOSFET N-CH 20V 32A 7-Pin Direct-FET MT T/R
***ment14 APAC
MOSFET, N, DIRECTFET, 20V, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6691; Current Id Max:26A; Package / Case:MT; Power Dissipation Pd:2.8mW; Pulse Current Idm:260A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.6V
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only.
型号 制造商 描述 库存 价格
IRF6716MTR1PBF
DISTI # IRF6716MTR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6716MTR1PBF
    DISTI # IRF6716MTR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6716MTR1PBF
      DISTI # IRF6716MTR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6716MTR1PBF
        DISTI # 70018859        		Infineon Technologies AG600V Ultrafast 8-25 kHz COPACK IGBT In a D2-PAK Package
        RoHS: Compliant        		0
        • 1000:$1.8200
        • 2000:$1.6500
        IRF6716MTR1PBF
        DISTI # 942-IRF6716MTR1PBF        		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
        RoHS: Compliant        		0
          IRF6716MTR1PBF
          DISTI # 1436939          		Infineon Technologies AGMOSFET, N, DIRECTFET, 25V, MX
          RoHS: Compliant          		0
          • 1:$5.0800
          • 10:$4.1800
          • 100:$3.3900
          • 250:$3.0300
          • 500:$2.6800
          • 1000:$2.5000
          图片 型号 描述
          IRF6716MTRPBF

          Mfr.#: IRF6716MTRPBF

          OMO.#: OMO-IRF6716MTRPBF

          		 MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
          IRF6716MTR1PBF

          Mfr.#: IRF6716MTR1PBF

          OMO.#: OMO-IRF6716MTR1PBF

          		 MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
          IRF6716MTR1PBF

          Mfr.#: IRF6716MTR1PBF

          OMO.#: OMO-IRF6716MTR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 25V 39A DIRECTFET
          IRF6716MTRPBF.

          Mfr.#: IRF6716MTRPBF.

          OMO.#: OMO-IRF6716MTRPBF--1190

          		 全新原装
          IRF6716PBF

          Mfr.#: IRF6716PBF

          OMO.#: OMO-IRF6716PBF-1190

          		 全新原装
          IRF6716MTRPBF

          Mfr.#: IRF6716MTRPBF

          OMO.#: OMO-IRF6716MTRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 25V 39A DIRECTFET
          可用性
          库存:
          Available
          订购:
          3000
          输入数量:
          IRF6716MTR1PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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