MJE13009G

MJE13009G
Mfr. #:
MJE13009G
制造商:
ON Semiconductor
描述:
Bipolar Transistors - BJT 12A 400V 100W NPN
生命周期:
制造商新产品。
数据表:
MJE13009G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
MJE13009G DatasheetMJE13009G Datasheet (P4-P6)MJE13009G Datasheet (P7-P9)MJE13009G Datasheet (P10)
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-220-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
400 V
集电极-基极电压 VCBO:
700 V
发射极基极电压 VEBO:
9 V
集电极-发射极饱和电压:
1 V
最大直流集电极电流:
12 A
增益带宽积 fT:
4 MHz
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
直流电流增益 hFE 最大值:
40
高度:
9.28 mm (Max)
长度:
10.28 mm (Max)
打包:
管子
宽度:
4.82 mm (Max)
品牌:
安森美半导体
连续集电极电流:
12 A
DC 集电极/基极增益 hfe 最小值:
8
Pd - 功耗:
12 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
50
子类别:
晶体管
单位重量:
0.211644 oz
Tags
MJE13009, MJE1300, MJE130, MJE13, MJE1, MJE
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
12 A, 400 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 400V 12A 3-Pin (3+Tab) TO-220AB Rail
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):6; Frequency Min:100MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***th Star Micro
The MJE13009 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:2W; DC Collector Current:12A; DC Current Gain hFE:4hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; Application Code:PHVS; Av Current Ic:12A; Collector Emitter Saturation Voltage Vce(on):1.5V; Continuous Collector Current Ic Max:12A; Current Ic @ Vce Sat:8A; Current Ic Continuous a Max:12A; Current Ic hFE:8mA; Device Marking:MJE13009; Fall Time @ Ic:0.7µs; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Gain Bandwidth ft Typ:4MHz; Hfe Min:6; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:100W; Voltage Vcbo:10VDC; Voltage Vces:700V
型号 制造商 描述 库存 价格
MJE13009G
DISTI # MJE13009GOS-ND
ON SemiconductorTRANS NPN 400V 12A TO220AB
RoHS: Compliant
Min Qty: 450
Container: Tube
Limited Supply - Call
    MJE13009G
    DISTI # 863-MJE13009G
    ON SemiconductorBipolar Transistors - BJT 12A 400V 100W NPN
    RoHS: Compliant
    0
      MJE13009GON Semiconductor 
      RoHS: Not Compliant
      73
      • 1000:$0.5900
      • 500:$0.6200
      • 100:$0.6500
      • 25:$0.6800
      • 1:$0.7300
      MJE13009G
      DISTI # 9557865
      ON SemiconductorTRANSISTOR, NPN, TO-220
      RoHS: Compliant
      0
      • 1:$2.0500
      • 10:$1.7000
      • 50:$1.4100
      • 100:$1.2300
      • 250:$0.8960
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      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
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