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IPB009N03L G

IPB009N03L G
Mfr. #:
IPB009N03L G
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
生命周期:
制造商新产品。
数据表:
IPB009N03L G 数据表
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ECAD Model:
更多信息:
IPB009N03L G 更多信息
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB009N03LGATMA1 IPB009N03LGXT SP000394657
单位重量
0.056438 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-263-7
技术
硅
通道数
1 Channel
配置
单昆特源
晶体管型
1 N-Channel
钯功耗
250 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
22 ns
上升时间
14 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
180 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
700 mOhms
晶体管极性
N通道
典型关断延迟时间
103 ns
典型开启延迟时间
26 ns
通道模式
增强
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB009N03LGATMA1
DISTI # V72:2272_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1353
  • 1000:$1.7480
  • 500:$2.1340
  • 250:$2.2700
  • 100:$2.4310
  • 25:$2.5250
  • 10:$2.8060
  • 1:$3.6278
IPB009N03LGATMA1
DISTI # V36:1790_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.4610
  • 500000:$1.4630
  • 100000:$1.5960
  • 10000:$1.8090
  • 1000:$1.8440
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1384In Stock
  • 500:$2.2522
  • 100:$2.6457
  • 10:$3.2290
  • 1:$3.6000
IPB009N03LGATMA1
DISTI # IPB009N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.6861
  • 2000:$1.7519
  • 1000:$1.8441
IPB009N03LGATMA1
DISTI # 26194931		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1353
  • 4:$3.6278
IPB009N03LGXT
DISTI # IPB009N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 10000:$1.5940
  • 6000:$1.6229
  • 4000:$1.6794
  • 2000:$1.7424
  • 1000:$1.8076
IPB009N03L G
DISTI # IPB009N03L G		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$1.5880
  • 25000:$1.6083
  • 10000:$1.6292
  • 5000:$1.6507
  • 3000:$1.6953
  • 2000:$1.7424
  • 1000:$1.7921
IPB009N03LGATMA1
DISTI # SP000394657		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 2000:€1.5900
  • 1000:€1.8900
IPB009N03LGATMA1.
DISTI # 15AC3078		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
  • 10000:$1.6000
  • 6000:$1.6300
  • 4000:$1.6800
  • 2000:$1.7500
  • 1:$1.8100
IPB009N03L G
DISTI # 726-IPB009N03LG		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		466
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 726-IPB009N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		900
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2000:$1.6600
  • 5000:$1.6000
IPB009N03LGATMA1
DISTI # 7545406P		Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL895
  • 500:£1.5200
  • 250:£1.6900
  • 50:£1.8700
  • 10:£2.0500
IPB009N03LGInfineon Technologies AG 98
  • 3:$2.4600
  • 10:$1.8450
  • 29:$1.5375
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA89
  • 39:$1.5000
  • 11:$2.0000
  • 1:$3.0000
IPB009N03LGInfineon Technologies AG180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA78
  • 38:$1.2300
  • 11:$2.0500
  • 1:$3.2800
IPB009N03L G
DISTI # TMOSP8652		Infineon Technologies AGN-CH30V 180A1mOhm TO263-3
RoHS: Compliant		Stock DE - 50Stock HK - 0Stock US - 0
  • 1000:$2.2600
  • 2000:$1.7400
IPB009N03LGATMA1
DISTI # 1775514		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-71885
  • 500:£1.5300
  • 250:£1.7000
  • 100:£1.7900
  • 10:£2.0600
  • 1:£2.8800
IPB009N03LGATMA1
DISTI # 1775514		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
RoHS: Compliant		500
  • 2000:$2.5000
  • 1000:$2.6400
  • 500:$3.1300
  • 250:$3.5000
  • 100:$3.6800
  • 10:$4.2500
  • 1:$5.0000
图片 型号 描述
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1

 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G

 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
IPB009N03LGATMA1

Mfr.#: IPB009N03LGATMA1

OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 180A TO263-7
IPB009N03L

Mfr.#: IPB009N03L

OMO.#: OMO-IPB009N03L-1190

 全新原装
IPB009N03L G

Mfr.#: IPB009N03L G

OMO.#: OMO-IPB009N03L-G-1190

 Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
IPB009N03LG

Mfr.#: IPB009N03LG

OMO.#: OMO-IPB009N03LG-1190

 MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
可用性
库存:
Available
订购:
2500
输入数量:
IPB009N03L G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.40
US$2.40
10
US$2.28
US$22.80
100
US$2.16
US$216.00
500
US$2.04
US$1 020.00
1000
US$1.92
US$1 920.00
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