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SQD23N06-31L-GE3

SQD23N06-31L-GE3
Mfr. #:
SQD23N06-31L-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
生命周期:
制造商新产品。
数据表:
SQD23N06-31L-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
E
技术：
硅
资质：
AEC-Q101
商品名：
沟槽场效应晶体管
打包：
卷轴
系列：
质量
品牌：
威世 / Siliconix
产品类别：
MOSFET
出厂包装数量：
2000
子类别：
MOSFET
单位重量：
0.050717 oz
Tags
SQD23N06-3, SQD23, SQD2, SQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SQD23N06 Series 60 V 23 A 31 mOhm Automotive N-Channel Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) TO-252AA T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
型号 制造商 描述 库存 价格
SQD23N06-31L-GE3
DISTI # V36:1790_09219196		Vishay IntertechnologiesN-CHANNEL 60V DPAK
RoHS: Compliant		0
  • 2000000:$0.6627
  • 1000000:$0.6629
  • 200000:$0.6803
  • 20000:$0.7096
  • 2000:$0.7144
SQD23N06-31L_GE3
DISTI # SQD23N06-31L_GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 23A TO252
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.6532
  • 6000:$0.6787
  • 2000:$0.7144
SQD23N06-31L_GE3
DISTI # SQD23N06-31L_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L_GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.6229
  • 12000:$0.6399
  • 8000:$0.6579
  • 4000:$0.6859
  • 2000:$0.7069
SQD23N06-31L_GE3
DISTI # SQD23N06-31L-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK (Alt: SQD23N06-31L-GE3)
RoHS: Compliant
Min Qty: 2000		Europe - 0
  • 20000:€0.5529
  • 12000:€0.5779
  • 8000:€0.6539
  • 4000:€0.8069
  • 2000:€1.1249
SQD23N06-31L_GE3
DISTI # SQD23N06-31L-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L-GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
    SQD23N06-31L_GE3
    DISTI # 781-SQD23N06-31L_GE3    		Vishay IntertechnologiesMOSFET 60V 23A 100W AEC-Q101 Qualified
    RoHS: Compliant    		3967
    • 1:$1.5500
    • 10:$1.3900
    • 100:$1.1100
    • 500:$0.9190
    • 1000:$0.7620
    • 2000:$0.7140
    • 4000:$0.6800
    • 10000:$0.6750
    SQD23N06-31L-GE3
    DISTI # 781-SQD23N06-31L-GE3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
    RoHS: Compliant    		0
      SQD23N06-31L-GE3Vishay Intertechnologies 531
        SQD23N06-31L-GE3Vishay Intertechnologies 1272
        • 318:$0.5460
        • 58:$0.6300
        • 1:$2.1000
        SQD23N0631LGE3Vishay IntertechnologiesPower Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Compliant        		2000
          SQD23N06-31L-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
          RoHS: Compliant          		Americas -
            图片 型号 描述
            SQD23N06-31L_GE3

            Mfr.#: SQD23N06-31L_GE3

            OMO.#: OMO-SQD23N06-31L-GE3-479

            		 MOSFET 60V 23A 100W AEC-Q101 Qualified
            SQD23N06-31L_T4GE3

            Mfr.#: SQD23N06-31L_T4GE3

            OMO.#: OMO-SQD23N06-31L-T4GE3

            		 MOSFET 60V Vds 20V Vgs TO-252
            SQD23N06-31L-GE3

            Mfr.#: SQD23N06-31L-GE3

            OMO.#: OMO-SQD23N06-31L-GE3-B59

            		 MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
            SQD23N06-31L_GE3

            Mfr.#: SQD23N06-31L_GE3

            OMO.#: OMO-SQD23N06-31L-GE3-VISHAY

            		 MOSFET N-CH 60V 23A TO252
            SQD23N06-31L

            Mfr.#: SQD23N06-31L

            OMO.#: OMO-SQD23N06-31L-1190

            		 全新原装
            SQD23N06-31L-GE3

            Mfr.#: SQD23N06-31L-GE3

            OMO.#: OMO-SQD23N06-31L-GE3-1190

            		 N-CHANNEL 60V DPAK
            SQD23N0631LGE3

            Mfr.#: SQD23N0631LGE3

            OMO.#: OMO-SQD23N0631LGE3-1190

            		 Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
            可用性
            库存:
            Available
            订购:
            5500
            输入数量:
            SQD23N06-31L-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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