BFP 640FESD H6327

BFP 640FESD H6327
Mfr. #:
BFP 640FESD H6327
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors RF BI
生命周期:
制造商新产品。
数据表:
BFP 640FESD H6327 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
BFP 640FESD H6327 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
射频双极晶体管
RoHS:
Y
系列:
BFP640
晶体管类型:
双极
技术:
硅锗
发射极基极电压 VEBO:
4.8 V
连续集电极电流:
50 mA
安装方式:
贴片/贴片
包装/案例:
TSFP-4-1
打包:
卷轴
类型:
射频硅锗
品牌:
英飞凌科技
Pd - 功耗:
200 mW
产品类别:
射频双极晶体管
出厂包装数量:
3000
子类别:
晶体管
第 # 部分别名:
BFP640FESDH6327XTSA1 BFP64FESDH6327XT SP000890034
单位重量:
0.000282 oz
Tags
BFP640FESDH, BFP640FES, BFP640FE, BFP640F, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
BFPx4 RF Transistors
Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More
型号 制造商 描述 库存 价格
BFP640FESDH6327XTSA1
DISTI # 32628507
Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant
210000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # 32628715
Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant
42000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # BFP640FESDH6327XTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ 4TSFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.1973
BFP640FESDH6327XTSA1
DISTI # V36:1790_06384747
Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant
0
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1
    Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Bulk (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 1924
    Container: Bulk
    Americas - 0
    • 19240:$0.1649
    • 9620:$0.1679
    • 5772:$0.1739
    • 3848:$0.1799
    • 1924:$0.1869
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1
    Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1609
    • 18000:$0.1639
    • 12000:$0.1699
    • 6000:$0.1759
    • 3000:$0.1829
    BFP640FESDH6327XTSA1
    DISTI # SP000890034
    Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R (Alt: SP000890034)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1679
    • 18000:€0.1809
    • 12000:€0.1959
    • 6000:€0.2139
    • 3000:€0.2619
    BFP 640FESD H6327
    DISTI # 726-BFP640FESDH6327
    Infineon Technologies AGRF Bipolar Transistors RF BI
    RoHS: Compliant
    4378
    • 1:$0.5600
    • 10:$0.4600
    • 100:$0.2810
    • 1000:$0.2170
    • 3000:$0.1850
    BFP640FESDH6327XTSA1Infineon Technologies AGInfineon Ultra Low-Noise SiGe:C TransistorBFP640FESD
    RoHS: Not Compliant
    3000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    BFP640FESDH6327Infineon Technologies AG 2291
      BFP640FESDH6327XTSA1
      DISTI # 2480672
      Infineon Technologies AGRF TRANSISTOR, NPN, 4.1V, 46GHZ, TSFP
      RoHS: Compliant
      45
      • 3000:$0.2850
      • 1000:$0.3340
      • 100:$0.4320
      • 10:$0.7070
      • 1:$0.8610
      BFP640FESDH6327Infineon Technologies AG4.1V,50mA,Bipolar RF NPN Transistor2350
      • 1:$0.3000
      • 100:$0.2500
      • 500:$0.2200
      • 1000:$0.2200
      图片 型号 描述
      OPA2189IDR

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      Operational Amplifiers - Op Amps 36V ZERO DRIFT OPAMP
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      OMO.#: OMO-FDD4685-F085

      MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab
      PIC24FJ128GA705-I/PT

      Mfr.#: PIC24FJ128GA705-I/PT

      OMO.#: OMO-PIC24FJ128GA705-I-PT

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      LM5165DRCR

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      TLV75733PDBVR

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      LDO Voltage Regulators 1A LDO
      RT0402BRD0710KL

      Mfr.#: RT0402BRD0710KL

      OMO.#: OMO-RT0402BRD0710KL

      Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
      RT0402BRD0710KL

      Mfr.#: RT0402BRD0710KL

      OMO.#: OMO-RT0402BRD0710KL-YAGEO

      Thin Film Resistors - SMD 10K ohm 0.1% 1/16W
      PIC24FJ128GA705-I/PT

      Mfr.#: PIC24FJ128GA705-I/PT

      OMO.#: OMO-PIC24FJ128GA705-I-PT-MICROCHIP-TECHNOLOGY

      16-BIT, 16 MIPS, 128KB FLASH,
      08051A680J4T4A

      Mfr.#: 08051A680J4T4A

      OMO.#: OMO-08051A680J4T4A-1190

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 68pF C0G 0805 5% AEC-Q200
      可用性
      库存:
      Available
      订购:
      1987
      输入数量:
      BFP 640FESD H6327的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.56
      US$0.56
      10
      US$0.46
      US$4.60
      100
      US$0.28
      US$28.10
      1000
      US$0.22
      US$217.00
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