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FQD2N90TM

FQD2N90TM
Mfr. #:
FQD2N90TM
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 900V N-Channel QFET
生命周期:
制造商新产品。
数据表:
FQD2N90TM 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
900 V
Id - 连续漏极电流：
1.7 A
Rds On - 漏源电阻：
7.2 Ohms
Vgs - 栅源电压：
30 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
2.39 mm
长度：
6.73 mm
系列：
FQD2N90
晶体管类型：
1 N-Channel
类型：
MOSFET
宽度：
6.22 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
1.7 S
秋季时间：
30 ns
产品类别：
MOSFET
上升时间：
35 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
20 ns
典型的开启延迟时间：
15 ns
单位重量：
0.026103 oz
Tags
FQD2N90TM, FQD2N90T, FQD2N9, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 1.7 A, 7.2 Ω, DPAK
***ark
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA
***nell
MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 5.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
*** Stop Electro
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω
***ure Electronics
N-Channel 800 V 6.3 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
***ure Electronics
N-Channel 900 V 6.5 Ohm SMT Zener-Protect SuperMESH MosFet TO-252-3
*** Source Electronics
Trans MOSFET N-CH 900V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 900V 2.1A DPAK
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in DPAK package
***ark
MOSFET, N-CH, 900V, 2.1A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***enic
900V 2.1A 5´Î@10V1.05A 70W 3.75V@50uA 10pF@25V N Channel 485pF@25V 19.5nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3(DPAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
*** Source Electronics
MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 800 V, 1.0 A, 20 Ω, DPAK
***ure Electronics
N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***icroelectronics
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
***ure Electronics
N-Channel 900 V 4.8 Ohm Surface Mount SuperMesh Power MosFet - TO-252-3
*** Source Electronics
MOSFET N-CH 900V 3A DPAK / Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R
***ark
MOSFET, N CHANNEL, 900V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A DPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 O 80 W Surface Mount SuperMESH™ Power MosFet - TO-252
***ark
MOSFET, N CHANNEL, 800V, 3A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
型号 制造商 描述 库存 价格
FQD2N90TM
DISTI # V72:2272_06301251		ON SemiconductorQF 900V 7.2OHM DPAK373
  • 250:$0.7060
  • 100:$0.7136
  • 25:$0.9036
  • 10:$0.9132
  • 1:$1.0671
FQD2N90TM
DISTI # FQD2N90TMCT-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4990In Stock
  • 1000:$0.5986
  • 500:$0.7582
  • 100:$0.9777
  • 10:$1.2370
  • 1:$1.4000
FQD2N90TM
DISTI # FQD2N90TMDKR-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4990In Stock
  • 1000:$0.5986
  • 500:$0.7582
  • 100:$0.9777
  • 10:$1.2370
  • 1:$1.4000
FQD2N90TM
DISTI # FQD2N90TMTR-ND		ON SemiconductorMOSFET N-CH 900V 1.7A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5424
FQD2N90TM
DISTI # 25743580		ON SemiconductorQF 900V 7.2OHM DPAK373
  • 250:$0.7060
  • 100:$0.7136
  • 25:$0.9036
  • 17:$0.9132
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3999
  • 5000:$0.3969
  • 10000:$0.3919
  • 15000:$0.3869
  • 25000:$0.3779
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5909
  • 5000:€0.4839
  • 10000:€0.4429
  • 15000:€0.4089
  • 25000:€0.3799
FQD2N90TM
DISTI # FQD2N90TM		ON SemiconductorTrans MOSFET N-CH 900V 1.7A 3-Pin(2+Tab) DPAK T/R (Alt: FQD2N90TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    FQD2N90TM
    DISTI # 82C4037    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1.7A I(D),TO-252AA ROHS COMPLIANT: YES0
    • 1:$0.4980
    • 2500:$0.4940
    • 10000:$0.4770
    • 25000:$0.4630
    FQD2N90TM
    DISTI # 512-FQD2N90TM    		ON SemiconductorMOSFET 900V N-Channel QFET
    RoHS: Compliant    		31
    • 1:$1.1600
    • 10:$0.9870
    • 100:$0.7580
    • 500:$0.6700
    • 1000:$0.5290
    • 2500:$0.4690
    • 10000:$0.4510
    FQD2N90TMON Semiconductor 
    RoHS: Not Compliant    		2394
    • 1000:$0.6700
    • 500:$0.7100
    • 100:$0.7400
    • 25:$0.7700
    • 1:$0.8300
    FQD2N90TM
    DISTI # C1S541901403014    		ON SemiconductorMOSFETs
    RoHS: Not Compliant    		373
    • 250:$0.7060
    • 100:$0.7136
    • 25:$0.9036
    • 10:$0.9132
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    可用性
    库存:
    Available
    订购:
    1992
    输入数量:
    FQD2N90TM的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.10
    US$1.10
    10
    US$0.94
    US$9.39
    100
    US$0.72
    US$72.10
    500
    US$0.64
    US$318.50
    1000
    US$0.50
    US$503.00
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