OMO ElectronicOMO Electronic
Expand menu
0 购物车

NGTG35N65FL2WG

NGTG35N65FL2WG
Mfr. #:
NGTG35N65FL2WG
制造商:
ON Semiconductor
描述:
IGBT Transistors 650V/35A FAST IGBT FSII T
生命周期:
制造商新产品。
数据表:
NGTG35N65FL2WG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG35N65FL2WG DatasheetNGTG35N65FL2WG Datasheet (P4-P6)NGTG35N65FL2WG Datasheet (P7)
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
2.2 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
70 A
Pd - 功耗：
300 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
打包：
管子
连续集电极电流 Ic 最大值：
35 A
品牌：
安森美半导体
栅极-发射极漏电流：
200 nA
产品类别：
IGBT晶体管
出厂包装数量：
30
子类别：
IGBT
单位重量：
1.340411 oz
Tags
NGTG3, NGTG, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, TO-247
***nell
IGBT, SINGLE, 650V, 70A, TO-247-3;
*** Electronics
ON SEMICONDUCTOR NGTG35N65FL2WG IGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 Pins
***i-Key
IGBT FIELD STOP 650V 70A TO247-3
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.7pF 25volts C0G +/-0.5pF
***nell
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 250 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***roFlash
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon SCT
650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.65 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 250 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
型号 制造商 描述 库存 价格
NGTG35N65FL2WG
DISTI # V99:2348_07277400		ON SemiconductorIGBT - FIELD STOP II
RoHS: Compliant		28
  • 2500:$1.7870
  • 1000:$1.8180
  • 500:$2.0210
  • 250:$2.0720
  • 100:$2.1290
  • 10:$2.3929
  • 1:$2.6200
NGTG35N65FL2WG
DISTI # V36:1790_07277400		ON SemiconductorIGBT - FIELD STOP II
RoHS: Compliant		0
    NGTG35N65FL2WG
    DISTI # NGTG35N65FL2WGOS-ND    		ON SemiconductorIGBT 650V 60A 167W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		120In Stock
    • 1020:$2.1560
    • 510:$2.5564
    • 120:$3.1570
    • 30:$3.4650
    • 1:$4.3100
    NGTG35N65FL2WG
    DISTI # 32039124    		ON SemiconductorIGBT - FIELD STOP II
    RoHS: Compliant    		2160
    • 240:$1.7766
    NGTG35N65FL2WG
    DISTI # 30603856    		ON SemiconductorIGBT - FIELD STOP II
    RoHS: Compliant    		30
    • 30:$1.7850
    NGTG35N65FL2WG
    DISTI # 25862558    		ON SemiconductorIGBT - FIELD STOP II
    RoHS: Compliant    		28
    • 2500:$1.9210
    • 1000:$1.9544
    • 500:$2.1726
    • 250:$2.2274
    • 100:$2.2887
    • 10:$2.5724
    • 4:$2.8165
    NGTG35N65FL2WG
    DISTI # NGTG35N65FL2WG    		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTG35N65FL2WG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€3.7200
    • 10:€2.8100
    • 100:€2.4500
    • 250:€2.3200
    • 500:€2.0800
    • 1000:€1.6700
    NGTG35N65FL2WG
    DISTI # NGTG35N65FL2WG    		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTG35N65FL2WG)
    Min Qty: 161
    Container: Bulk    		Americas - 0
    • 161:$1.9900
    • 163:$1.9900
    • 324:$1.9900
    • 805:$1.8900
    • 1610:$1.8900
    NGTG35N65FL2WG
    DISTI # NGTG35N65FL2WG    		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG35N65FL2WG)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$1.8301
    • 300:$1.8182
    • 540:$1.7949
    • 1200:$1.7721
    • 2400:$1.7284
    NGTG35N65FL2WG
    DISTI # NGTG35N65FL2WG    		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTG35N65FL2WG)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
    • 240:$2.8000
    • 480:$2.6923
    • 720:$2.5926
    • 1200:$2.5000
    • 2400:$2.4138
    • 6000:$2.3333
    • 12000:$2.2951
    NGTG35N65FL2WG
    DISTI # 75Y1871    		ON SemiconductorIGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 RoHS Compliant: Yes69
    • 10:$3.3600
    • 1:$3.9400
    NGTG35N65FL2WG.
    DISTI # 29AC8933    		ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 10:$3.3600
    • 1:$3.9400
    NGTG35N65FL2WG
    DISTI # 863-NGTG35N65FL2WG    		ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
    RoHS: Compliant    		230
    • 1:$3.7100
    • 10:$3.1500
    • 100:$2.7400
    • 250:$2.6000
    • 500:$2.3300
    NGTG35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant    		22950
    • 1000:$2.0500
    • 500:$2.1600
    • 100:$2.2500
    • 25:$2.3500
    • 1:$2.5300
    NGTG35N65FL2WG
    DISTI # 9008817P    		ON SemiconductorIGBT FIELD STOP II 650V 35A TO247-3, TU65
    • 500:£1.9780
    • 250:£2.0720
    • 100:£2.2160
    • 25:£2.3780
    NGTG35N65FL2WGON Semiconductor650V,35A,IGBT20
    • 1:$3.4300
    • 100:$2.5700
    • 500:$2.2000
    • 1000:$2.0600
    NGTG35N65FL2WG
    DISTI # 2508344    		ON SemiconductorIGBT, SINGLE, 650V, 70A, TO-247-3
    RoHS: Compliant    		69
    • 500:£1.5900
    • 250:£1.7800
    • 100:£1.8800
    • 10:£2.1600
    • 1:£2.8600
    NGTG35N65FL2WG
    DISTI # 2508344    		ON SemiconductorIGBT, SINGLE, 650V, 70A, TO-247-3
    RoHS: Compliant    		69
    • 500:$3.5100
    • 250:$3.9200
    • 100:$4.1300
    • 10:$4.7500
    • 1:$5.5900
    图片 型号 描述
    DRV10974PWPR

    Mfr.#: DRV10974PWPR

    OMO.#: OMO-DRV10974PWPR

    		 Motor / Motion / Ignition Controllers & Drivers DRV10974PWPR
    LB11620T-TLM-E

    Mfr.#: LB11620T-TLM-E

    OMO.#: OMO-LB11620T-TLM-E

    		 Motor / Motion / Ignition Controllers & Drivers 3PH PRE SENSOR OPEN ; THR
    DRV10974PWPR

    Mfr.#: DRV10974PWPR

    OMO.#: OMO-DRV10974PWPR-TEXAS-INSTRUMENTS

    		 IC MTR DRV MULTI 4.4-18V 16HSSOP
    LB11620T-TLM-E

    Mfr.#: LB11620T-TLM-E

    OMO.#: OMO-LB11620T-TLM-E-ON-SEMICONDUCTOR

    		 Motor / Motion / Ignition Controllers & Drivers 3PHASE MOTOR PRE-DRIVER
    可用性
    库存:
    230
    订购:
    2213
    输入数量:
    NGTG35N65FL2WG的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.71
    US$3.71
    10
    US$3.15
    US$31.50
    100
    US$2.74
    US$274.00
    250
    US$2.60
    US$650.00
    500
    US$2.33
    US$1 165.00
    从...开始
    Top