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AIGW50N65F5XKSA1

AIGW50N65F5XKSA1
Mfr. #:
AIGW50N65F5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors DISCRETES
生命周期:
制造商新产品。
数据表:
AIGW50N65F5XKSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
AIGW50N65F5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.66 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
270 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 F5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
AIGW50N65F5 SP001346882
单位重量：
0.211644 oz
Tags
AIGW5, AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 80A, 270W, To-247 Rohs Compliant: Yes
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***nell
IGBT, AEC-Q101, 650V, 80A, 270W, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP 5 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
AIGW50N65F5XKSA1
DISTI # AIGW50N65F5XKSA1-ND		Infineon Technologies AGIGBT 650V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		105In Stock
  • 2640:$3.6189
  • 720:$4.2069
  • 240:$4.8312
  • 25:$5.5640
  • 10:$5.8350
  • 1:$6.4600
AIGW50N65F5XKSA1
DISTI # AIGW50N65F5XKSA1		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW50N65F5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.1900
  • 1440:$3.2900
  • 960:$3.3900
  • 480:$3.4900
  • 240:$3.6900
AIGW50N65F5XKSA1
DISTI # SP001346882		Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V (Alt: SP001346882)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.9900
  • 500:€3.0900
  • 100:€3.1900
  • 50:€3.2900
  • 25:€3.3900
  • 10:€3.6900
  • 1:€4.5900
AIGW50N65F5XKSA1
DISTI # 93AC6942		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247 ROHS COMPLIANT: YES224
  • 500:$4.0400
  • 250:$4.4300
  • 100:$4.6500
  • 50:$5.0000
  • 25:$5.3500
  • 10:$5.6100
  • 1:$6.2000
AIGW50N65F5XKSA1
DISTI # 726-AIGW50N65F5XKSA1		Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant		620
  • 1:$6.1400
  • 10:$5.5500
  • 25:$5.3000
  • 100:$4.6000
  • 250:$4.3900
  • 500:$4.0000
AIGW50N65F5XKSA1
DISTI # 2986330		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247
RoHS: Compliant		224
  • 1000:$5.2800
  • 500:$5.7700
  • 250:$6.3700
  • 100:$6.6900
  • 10:$7.6400
  • 1:$9.7700
AIGW50N65F5XKSA1
DISTI # 2986330		Infineon Technologies AGIGBT, AEC-Q101, 650V, 80A, 270W, TO-247224
  • 500:£2.9000
  • 250:£3.1800
  • 100:£3.3300
  • 10:£3.8500
  • 1:£4.9000
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TPS3851H33EDRBT

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SZ1SMB5929BT3G

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SC189ASKTRT

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可用性
库存:
620
订购:
2603
输入数量:
AIGW50N65F5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.14
US$6.14
10
US$5.55
US$55.50
25
US$5.30
US$132.50
100
US$4.60
US$460.00
250
US$4.39
US$1 097.50
500
US$4.00
US$2 000.00
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