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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| RFD7N10LE | Harris Semiconductor | Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 5942 |
|
| RFD7N10LE | Intersil Corporation | *** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, TO-251AA | 6110 |
|
| RFD7N10LE | Harris Semiconductor | *** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, N-Channel, TO-251AA | 46 |
|
| RFD7N10LE | Intersil Corporation | 500 | ||
| RFD7N10LE | Harris Semiconductor | 58 | ||
| RFD7N10LESM | Harris Semiconductor | 19 | ||
| RFD7N10LESM | Harris Semiconductor | 1155 | ||
| RFD7N10LESM | Intersil Corporation | 2889 |
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Mfr.#: RFD7N10LE OMO.#: OMO-RFD7N10LE-1190 |
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD7N10LEEM OMO.#: OMO-RFD7N10LEEM-1190 |
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Mfr.#: RFD7N10LESM OMO.#: OMO-RFD7N10LESM-1190 |
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