IS43R32800D-5BLI

Mfr. #:: IS43R32800D-5BLI
制造商:: ISSI
描述:: DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM
生命周期:: 制造商新产品。
数据表:: IS43R32800D-5BLI 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IS43R32800D-5BLI 更多信息

产品属性
属性值

制造商：: 国际空间站

产品分类：: 动态随机存取存储器

RoHS：: Y

类型：: SDRAM - DDR1

数据总线宽度：: 32 bit

组织：: 8 M x 32

包装/案例：: LFBGA-144

内存大小：: 256 Mbit

最大时钟频率：: 200 MHz

访问时间：: 5 ns

电源电压 - 最大值：: 2.7 V

电源电压 - 最小值：: 2.3 V

电源电流 - 最大值：: 460 mA

最低工作温度：: - 40 C

最高工作温度：: + 85 C

系列：: IS43R32800D

打包：: 托盘

品牌：: 国际空间站

安装方式：: 贴片/贴片

湿气敏感：: 是的

工作电源电压：: 2.5 V

产品类别：: 动态随机存取存储器

出厂包装数量：: 189

子类别：: 内存和数据存储

Tags: IS43R32800D-5BLI, IS43R32800D-5BL, IS43R32800D-5, IS43R32800D, IS43R328, IS43R3, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R32800D-5BLI 评级和评论

J***a

Fuflo transistors, do not buy. 4re of 5 transistors: rdson = 65 mohm at current through 1a channel and at shutter voltage 10 volts, rdson = 183 mohm at current through 1a channel and at shutter voltage 5 volts. The 5th transistor was generally defective: rdson = 750 mohm (!!!) at the current through the 1a channel and the voltage on the shutter 10 volts. In short, they sell rejection. Do not waste money and time.

2019-04-16

M***h

I recommend

2019-08-07

A***n

2019-04-05

IS43R32800D-5BLI 描述

***et Europe: DRAM Chip DDR SDRAM 256M-Bit 8M x 32 2.5V 144-Pin LFBGA

***ark: 256M, 2.5V, Ddr, 8Mx32, 200Mhz, 144-Ball Bga (12Mmx12Mm) Rohs, It

***I SCT: DDR SDRAM, 8Mx32, 2.5V, 4K, BGA-144,RoHS

***enic: LFBGA-144(12x12) DDR SDRAM ROHS

***NGYU ELECTRONICS: IC DRAM 256M PARALLEL 144LFBGA

***el Electronic: DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

IS43R32800D-5BLI 更多信息

DDR SDRAM: ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

Market price

型号	制造商	描述	库存	价格
IS43R32800D-5BLI DISTI # V99:2348_14073052	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	251	1000:$6.0590 500:$6.3050 250:$6.6480 100:$6.8940 25:$7.6200 10:$7.8620 1:$8.5109
IS43R32800D-5BLI DISTI # V36:1790_14073052	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	79	1000:$6.0590 500:$6.3050 250:$6.6480 100:$6.8940 25:$7.6200 10:$7.8620 1:$8.5109
IS43R32800D-5BLI DISTI # IS43R32800D-5BLI-ND	Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 144LFBGA RoHS: Compliant Min Qty: 189 Container: Tray	Temporarily Out of Stock	189:$7.4705
IS43R32800D-5BLI-TR DISTI # IS43R32800D-5BLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 144LFBGA RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$6.7898
IS43R32800D-5BLI DISTI # 25887347	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	251	250:$6.6620 100:$6.9080 25:$7.6370 10:$7.8790 1:$8.5310
IS43R32800D-5BLI DISTI # 27134547	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	79	25:$7.6370 10:$7.8790 2:$8.5310
IS43R32800D-5BLI DISTI # IS43R32800D-5BLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256M-Bit 8M x 32 2.5V 144-Pin LFBGA - Bulk (Alt: IS43R32800D-5BLI) RoHS: Compliant Min Qty: 189 Container: Bulk	Americas - 0	189:$6.7900 378:$6.4900 756:$6.2900 1134:$6.0900 1890:$5.7900
IS43R32800D-5BLI DISTI # IS43R32800D-5BLI	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256M-Bit 8M x 32 2.5V 144-Pin LFBGA (Alt: IS43R32800D-5BLI) RoHS: Compliant Min Qty: 1	Europe - 0	1:€7.6900 10:€6.9900 25:€6.6900 50:€6.4900 100:€6.1900 500:€5.9900 1000:€5.5900
IS43R32800D-5BLI-TR DISTI # IS43R32800D-5BLI-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256M-Bit 8M x 32 2.5V 144-Pin LFBGA T/R - Tape and Reel (Alt: IS43R32800D-5BLI-TR) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$6.9900 3000:$6.6900 6000:$6.3900 9000:$6.1900 15000:$5.9900
IS43R32800D-5BLI DISTI # 870-IS43R32800D-5BLI	Integrated Silicon Solution Inc	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM RoHS: Compliant	231	1:$9.2700 10:$8.5300 25:$8.3200 100:$7.4700 250:$7.2400 500:$6.8800 1000:$6.6400
IS43R32800D-5BLI-TR DISTI # 870-IS43R32800D5BLIT	Integrated Silicon Solution Inc	DRAM 256M (16Mx16) 200MHz DDR 2.5v RoHS: Compliant	0	1500:$6.2400
IS43R32800D-5BLI DISTI # C1S328800046083	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	79	250:$6.6620
IS43R32800D-5BLI DISTI # C1S328800077472	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256Mbit 8Mx32 2.5V 144-Pin LFBGA RoHS: Compliant	251	250:$6.6620

图片	型号	描述
	Mfr.#: IS43R32800B-6BL-TR OMO.#: OMO-IS43R32800B-6BL-TR	DRAM 256M (16Mx16) 333MHz DDR 2.5v
	Mfr.#: IS43R32800D-5B OMO.#: OMO-IS43R32800D-5B	DRAM 256M, 2.5V, DDR, 8Mx32, 200MHz, 144-ball BGA (12mmx12mm)
	Mfr.#: IS43R32800D-5BL-TR OMO.#: OMO-IS43R32800D-5BL-TR-INTEGRATED-SILICON-SOLUTION	DRAM 256M (16Mx16) 200MHz DDR 2.5v
	Mfr.#: IS43R32800B-5BI OMO.#: OMO-IS43R32800B-5BI-1190	全新原装
	Mfr.#: IS43R32800D-5BLI/BL OMO.#: OMO-IS43R32800D-5BLI-BL-1190	全新原装
	Mfr.#: IS43R32800B-5BL OMO.#: OMO-IS43R32800B-5BL-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 144MINIBGA
	Mfr.#: IS43R32800B-5BL-TR OMO.#: OMO-IS43R32800B-5BL-TR-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 144MINIBGA
	Mfr.#: IS43R32800B-6BL-TR OMO.#: OMO-IS43R32800B-6BL-TR-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 144MINIBGA
	Mfr.#: IS43R32800D-5B-TR OMO.#: OMO-IS43R32800D-5B-TR-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 144LFBGA
	Mfr.#: IS43R32800D-5BI OMO.#: OMO-IS43R32800D-5BI-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 144LFBGA