IXTP2N80P

Mfr. #:: IXTP2N80P
制造商:: IXYS
描述:: MOSFET 2 Amps 800V 6 Rds
生命周期:: 制造商新产品。
数据表:: IXTP2N80P 数据表
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产品属性
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制造商: IXYS

产品分类: 晶体管 - FET、MOSFET - 单

系列: IXTP2N80

打包: 管子

单位重量: 0.081130 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 70 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 28 ns

上升时间: 35 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 2 A

Vds-漏-源-击穿电压: 800 V

Rds-On-Drain-Source-Resistance: 6 Ohms

晶体管极性: N通道

典型关断延迟时间: 53 ns

典型开启延迟时间: 25 ns

通道模式: 增强

Tags: IXTP2N, IXTP2, IXTP, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTP2N80P 描述

***i-Key: MOSFET N-CH 800V 2A TO-220

***S: new, original packaged

***el Nordic: Contact for details

***icroelectronics: N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220 Zener-Protected SuperMESH™ Power MOSFET

***ical: Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***akorn: MOSFET N-CH 600V 2.4A TO-220

***ser: MOSFETs & MOSFETs RF .

***el Nordic: Contact for details

***icroelectronics: N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET

***va Crawler: N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube

***enic: 900V 2.1A 70W 6.5´Î@10V1.05A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***r Electronics: Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220

*** Source Electronics: Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220

***ure Electronics: N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB

***ment14 APAC: MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Source Voltage Vds:900V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

***th Star Micro: Transistor MOSFET N-CH 600V 2.4A 3-Pin (3+Tab) TO-220 Tube

***icroelectronics: N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220 Zener-Protected SuperMESH™ PowerMOSFET

***ure Electronics: N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220

***va Crawler: N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***i-Key: MOSFET N-CH 900V 3.6A TO-220

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.25ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd

***ark: MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:4.25R; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:14.4A; Pins, No. of:3; Power dissipation:130W; Power, Pd:130W; RoHS Compliant: Yes

Market price

型号	制造商	描述	库存	价格
IXTP2N80P DISTI # IXTP2N80P-ND	IXYS Corporation	MOSFET N-CH 800V 2A TO-220 RoHS: Compliant Min Qty: 50 Container: Tube	Limited Supply - Call	50:$1.0780
IXTP2N80P DISTI # 747-IXTP2N80P	IXYS Corporation	MOSFET 2 Amps 800V 6 Rds RoHS: Compliant	0

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IXTP2N80P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes