CSD19535KTTT

Mfr. #:: CSD19535KTTT
描述:: IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
生命周期:: 制造商新产品。
数据表:: CSD19535KTTT 数据表
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更多信息:: CSD19535KTTT 更多信息 CSD19535KTTT Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

系列: CSD19535KTT

打包: 卷轴

单位重量: 0.068654 oz

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 300 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 18 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 200 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 4.1 mOhms

晶体管极性: N通道

典型关断延迟时间: 21 ns

典型开启延迟时间: 9 ns

Qg-门电荷: 75 nC

正向跨导最小值: 301 S

通道模式: 增强

Tags: CSD19535, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19535KTTT 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD19535KTTT DISTI # 296-41135-1-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-6-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-2-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	1250In Stock	250:$2.5784 100:$2.8571 50:$3.1358
CSD19535KTTT DISTI # CSD19535KTTT	Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT) RoHS: Compliant Min Qty: 200 Container: Reel	Americas - 0	200:$1.7900 300:$1.6900 500:$1.5900 1000:$1.5900 2000:$1.4900
CSD19535KTTT	CSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET	1000	1000:$1.4400 750:$1.5100 500:$1.7900 250:$2.1000 100:$2.2400 25:$2.5600 10:$2.7500 1:$3.0500
CSD19535KTTT DISTI # 595-CSD19535KTTT	MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant	561	1:$3.3500 10:$3.0200 50:$3.0200 100:$2.4700 250:$2.3100 500:$2.1000
CSD19535KTT DISTI # 595-CSD19535KTT	MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 RoHS: Compliant	88	1:$3.0200 10:$2.7100 100:$2.2200 250:$2.0800 500:$1.8900
CSD19535KTTT DISTI # 9009885P	NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL	230	10:£2.2000 26:£2.1150 50:£2.0300

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