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IRGP30B60KD-EP

IRGP30B60KD-EP
Mfr. #:
IRGP30B60KD-EP
制造商:
Infineon Technologies
描述:
IGBT Transistors 600V UltraFast 5-40kHz
生命周期:
制造商新产品。
数据表:
IRGP30B60KD-EP 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGP30B60KD-EP DatasheetIRGP30B60KD-EP Datasheet (P4-P6)IRGP30B60KD-EP Datasheet (P7-P9)IRGP30B60KD-EP Datasheet (P10-P12)IRGP30B60KD-EP Datasheet (P13)
ECAD Model:
更多信息:
IRGP30B60KD-EP 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.35 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
304 W
最低工作温度：
- 55 C
打包：
管子
高度：
20.7 mm
长度：
15.87 mm
宽度：
5.31 mm
品牌：
英飞凌科技
产品类别：
IGBT晶体管
出厂包装数量：
400
子类别：
IGBT
第 # 部分别名：
SP001549784
单位重量：
1.340411 oz
Tags
IRGP30B60KD-EP, IRGP30B60KD-E, IRGP30B6, IRGP30B, IRGP30, IRGP3, IRGP, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
600V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRGP30B60KD-EP Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AD
***ow.cn
Trans IGBT Chip N-CH 600V 60A 304000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ineon
Target Applications: Pump; Solar; UPS; Welding
*** Electronic Components
IGBT Transistors 600V UltraFast 5-40kHz
***or
AUTOMOTIVE WARP2 IGBT ULTRAFAST
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IGBT with Ultrafast Soft Recovery Diode; Warp2 Series; 600 V; 22 A; TO-247AC
***ure Electronics
IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ark
Igbt, High Speed, 600V, 60A, To-247A
***nell
IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AD
***ark
TUBE / 600V Warp2 150kHz Copack IGBT in a TO-247AC package
***ure Electronics
IRGP35B60PD Series 600 V 60 A Ultrafast Soft Recovery Diode - TO247AD
***i-Key Marketplace
AUTOMOTIVE WARP2 IGBT ULTRAFAST
***ineon
Target Applications: AC-DC; Fan; PFC; Pump
***roFlash
Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD
***ark
Transistor, Igbt, 600V, 60A, To-247Ad Rohs Compliant: Yes
***el Electronic
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
***i-Key
IGBT 650V 60A 270W TO247
***S
French Electronic Distributor since 1988
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型号 制造商 描述 库存 价格
IRGP30B60KD-EP
DISTI # V99:2348_13892799		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		459
  • 1000:$3.6470
  • 500:$4.1529
  • 100:$4.5750
  • 25:$5.2670
  • 1:$6.7034
IRGP30B60KD-EP
DISTI # V36:1790_13892799		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		0
    IRGP30B60KD-EP
    DISTI # IRGP30B60KD-EP-ND    		Infineon Technologies AGIGBT 600V 60A 304W TO247AD
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		195In Stock
    • 1000:$3.6529
    • 500:$4.1941
    • 100:$4.8164
    • 25:$5.5468
    • 1:$6.4400
    IRGP30B60KD-EP
    DISTI # 31672140    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant    		1188
    • 4:$3.1104
    IRGP30B60KD-EP
    DISTI # 30308668    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant    		459
    • 1000:$3.9205
    • 500:$4.4644
    • 100:$4.9181
    • 25:$5.6620
    • 2:$6.5511
    IRGP30B60KD-EP
    DISTI # 32416775    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant    		150
    • 250:$4.4133
    • 100:$4.5441
    • 25:$5.2371
    IRGP30B60KD-EP
    DISTI # SP001549784    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC (Alt: SP001549784)
    RoHS: Compliant
    Min Qty: 1    		Europe - 400
    • 1000:€2.5900
    • 500:€2.7900
    • 100:€2.8900
    • 50:€3.0900
    • 25:€3.1900
    • 10:€3.2900
    • 1:€3.5900
    IRGP30B60KD-EP
    DISTI # IRGP30B60KD-EP    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP30B60KD-EP)
    Min Qty: 111
    Container: Bulk    		Americas - 0
    • 1110:$2.7900
    • 555:$2.8900
    • 333:$2.9900
    • 222:$3.0900
    • 111:$3.1900
    IRGP30B60KD-EP
    DISTI # IRGP30B60KD-EP    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRGP30B60KD-EP)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
    • 2400:$3.1900
    • 4000:$3.1900
    • 1600:$3.2900
    • 800:$3.4900
    • 400:$3.5900
    IRGP30B60KD-EPInfineon Technologies AGIRGP30B60KD-EP Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AD
    RoHS: Compliant    		255Tube
    • 5:$5.4700
    • 25:$4.6900
    • 50:$4.5400
    • 100:$4.3900
    • 250:$4.2000
    IRGP30B60KD-EP
    DISTI # 942-IRGP30B60KD-EP    		Infineon Technologies AGIGBT Transistors 600V UltraFast 5-40kHz
    RoHS: Compliant    		776
    • 1:$6.1300
    • 10:$5.5400
    • 25:$5.2800
    • 100:$4.5800
    • 250:$4.3800
    • 500:$3.9900
    • 1000:$3.4800
    IRGP30B60KD-EPInternational Rectifier 
    RoHS: Not Compliant    		250
    • 1000:$2.9700
    • 500:$3.1300
    • 100:$3.2600
    • 25:$3.4000
    • 1:$3.6600
    IRGP30B60KD-EP
    DISTI # 9074851P    		Infineon Technologies AGIGBT N-CHANNEL 600V 60A TO-247AC, TU95
    • 1250:£2.9700
    • 500:£3.5160
    • 250:£3.7180
    • 50:£3.9780
    IRGP30B60KD-EPInternational Rectifier 153
      IRGP30B60KD-EP
      DISTI # IRGP30B60KD-EP      		Infineon Technologies AGTransistor: IGBT,600V,60A,304W,TO247-352
      • 1:$5.4600
      • 5:$4.7600
      • 25:$4.0300
      • 100:$3.5100
      IRGP30B60KD-EP
      DISTI # XSKDRABV0021564      		Infineon Technologies AGInsulated Gate BipolarTransistor,20AI(C),1200VV(BR)CES, N-Channel,TO-247AC
      RoHS: Compliant      		325 in Stock0 on Order
      • 325:$5.2200
      • 150:$5.5920
      IRGP30B60KD-EP
      DISTI # XSFP00000074478      		Infineon Technologies AG 
      RoHS: Compliant      		138 in Stock0 on Order
      • 138:$6.0800
      • 19:$6.4400
      IRGP30B60KDEPInternational Rectifier 
      RoHS: Not Compliant      		Europe - 274
        IRGP30B60KDEPBFInternational Rectifier 
        RoHS: Compliant        		Europe - 95
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          可用性
          库存:
          589
          订购:
          2572
          输入数量:
          IRGP30B60KD-EP的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
          参考价格（美元）
          数量
          单价
          小计金额
          1
          US$6.13
          US$6.13
          10
          US$5.54
          US$55.40
          25
          US$5.28
          US$132.00
          100
          US$4.58
          US$458.00
          250
          US$4.38
          US$1 095.00
          500
          US$3.99
          US$1 995.00
          1000
          US$3.48
          US$3 480.00
          2500
          US$3.35
          US$8 375.00
          由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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