TC58BYG0S3HBAI4

TC58BYG0S3HBAI4
Mfr. #:
TC58BYG0S3HBAI4
制造商:
Toshiba Memory
描述:
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
生命周期:
制造商新产品。
数据表:
TC58BYG0S3HBAI4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
东芝
产品分类:
NAND闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
TFBGA-63
内存大小:
1 Gbit
接口类型:
平行线
组织:
128 M x 8
计时类型:
同步
数据总线宽度:
8 bit
电源电压 - 最小值:
1.7 V
电源电压 - 最大值:
1.95 V
电源电流 - 最大值:
30 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
托盘
内存类型:
NAND
产品:
NAND闪存
速度:
25 ns
建筑学:
块擦除
品牌:
东芝内存
最大时钟频率:
-
湿气敏感:
是的
产品类别:
NAND闪存
出厂包装数量:
210
子类别:
内存和数据存储
Tags
TC58BYG0S3HBAI4, TC58BYG0S3HB, TC58BYG0S3, TC58BYG0, TC58BY, TC58B, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
***i-Key
1GB SLC NAND BGA 24NM I TEMP (EE
型号 制造商 描述 库存 价格
TC58BYG0S3HBAI4
DISTI # TC58BYG0S3HBAI4-ND
Toshiba Semiconductor and Storage Products1GB SLC NAND BGA 24NM I TEMP (EE
RoHS: Compliant
Min Qty: 210
Container: Tray
Temporarily Out of Stock
  • 210:$3.0750
TC58BYG0S3HBAI4
DISTI # TC58BYG0S3HBAI4
Toshiba America Electronic Components1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG0S3HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray
Americas - 0
  • 210:$2.2900
  • 420:$2.2900
  • 840:$2.1900
  • 1260:$2.1900
  • 2100:$2.0900
TC58BYG0S3HBAI4
DISTI # 757-TC58BYG0S3HBAI4
Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
0
  • 1:$4.2000
  • 10:$3.3800
  • 100:$3.0800
  • 250:$2.7800
  • 500:$2.5000
  • 1000:$2.1000
  • 2500:$2.0000
图片 型号 描述
TH58NVG3S0HTAI0

Mfr.#: TH58NVG3S0HTAI0

OMO.#: OMO-TH58NVG3S0HTAI0

NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
MT29F128G08CFABBWP-12IT:B TR

Mfr.#: MT29F128G08CFABBWP-12IT:B TR

OMO.#: OMO-MT29F128G08CFABBWP-12IT-B-TR

NAND Flash MLC 128G 16GX8 TSOP DDP
MT29F16G08CBACAWP:C TR

Mfr.#: MT29F16G08CBACAWP:C TR

OMO.#: OMO-MT29F16G08CBACAWP-C-TR

NAND Flash MLC 16G 2GX8 TSOP
MT28FW02GBBA1HPC-0AAT TR

Mfr.#: MT28FW02GBBA1HPC-0AAT TR

OMO.#: OMO-MT28FW02GBBA1HPC-0AAT-TR

NOR Flash PARALLEL NOR SLC 128MX16 LBGA DDP
S29AL016J70TFI010

Mfr.#: S29AL016J70TFI010

OMO.#: OMO-S29AL016J70TFI010

NOR Flash 16Mb 3V 70ns Parallel NOR Flash
S29AL008J70BFI020

Mfr.#: S29AL008J70BFI020

OMO.#: OMO-S29AL008J70BFI020

NOR Flash 8Mb 3V 70ns Parallel NOR Flash
TH58NVG3S0HTAI0

Mfr.#: TH58NVG3S0HTAI0

OMO.#: OMO-TH58NVG3S0HTAI0-TOSHIBA-MEMORY-AMERICA

EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM
S29AL008J70BFI020

Mfr.#: S29AL008J70BFI020

OMO.#: OMO-S29AL008J70BFI020-CYPRESS-SEMICONDUCTOR

IC FLASH 8M PARALLEL 48FBGA AL-J
S29AL016J70TFI010

Mfr.#: S29AL016J70TFI010

OMO.#: OMO-S29AL016J70TFI010-CYPRESS-SEMICONDUCTOR

IC FLASH 16M PARALLEL 48TSOP
MT28FW02GBBA1HPC-0AAT TR

Mfr.#: MT28FW02GBBA1HPC-0AAT TR

OMO.#: OMO-MT28FW02GBBA1HPC-0AAT-TR-MICRON-TECHNOLOGY

IC FLASH 2G PARALLEL 64LBGA Automotive, AEC-Q100
可用性
库存:
210
订购:
2193
输入数量:
TC58BYG0S3HBAI4的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.77
US$2.77
10
US$2.49
US$24.90
25
US$2.45
US$61.25
50
US$2.44
US$122.00
100
US$2.18
US$218.00
250
US$2.11
US$527.50
500
US$2.10
US$1 050.00
1000
US$1.96
US$1 960.00
2500
US$1.87
US$4 675.00
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