IPW65R037C6FKSA1

IPW65R037C6FKSA1
Mfr. #:
IPW65R037C6FKSA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
生命周期:
制造商新产品。
数据表:
IPW65R037C6FKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-247-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
83.2 A
Rds On - 漏源电阻:
33 mOhms
Vgs th - 栅源阈值电压:
2.5 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
330 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
500 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
高度:
21.1 mm
长度:
16.13 mm
系列:
CoolMOS C6
晶体管类型:
1 N-Channel
宽度:
5.21 mm
品牌:
英飞凌科技
秋季时间:
7 ns
产品类别:
MOSFET
上升时间:
32 ns
出厂包装数量:
240
子类别:
MOSFET
典型关断延迟时间:
140 ns
典型的开启延迟时间:
22 ns
第 # 部分别名:
IPW65R037C6 IPW65R37C6XK SP000756284
单位重量:
1.340411 oz
Tags
IPW65R03, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, N-Channel MOSFET, 83 A, 700 V, 3-Pin TO-247 Infineon IPW65R037C6FKSA1
***ure Electronics
Single N-Channel 650 V 37 mOhm 330 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Global
Trans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247
***et Europe
Trans MOSFET N-CH 700V 83.2A 3-Pin TO-247 Tube
***ark
MOSFET, N-CH, 650V, 83.2A, TO-247-3
*** Source Electronics
MOSFET N-CH 650V 83.2A TO247-3
***ukat
N-Ch 650V 83,2A 500W 0,037R TO247
***ronik
N-CH 650V 37mOhm 83,2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 83.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:83.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:500W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 83.2A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:83.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:500W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
型号 制造商 描述 库存 价格
IPW65R037C6FKSA1
DISTI # V99:2348_06377907
Infineon Technologies AGTrans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
228
  • 500:$9.9160
  • 250:$10.5580
  • 100:$10.8050
  • 25:$12.6300
  • 10:$13.1730
  • 1:$14.3180
IPW65R037C6FKSA1
DISTI # V36:1790_06377907
Infineon Technologies AGTrans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$7.9800
  • 120000:$7.9850
  • 24000:$8.5940
  • 2400:$9.8250
  • 240:$10.0400
IPW65R037C6FKSA1
DISTI # IPW65R037C6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 83.2A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
217In Stock
  • 510:$10.4303
  • 120:$11.7252
  • 30:$13.3077
  • 10:$13.8830
  • 1:$15.1100
IPW65R037C6FKSA1
DISTI # 33943635
Infineon Technologies AGTrans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
1390
  • 2:$8.5807
IPW65R037C6FKSA1
DISTI # 33621023
Infineon Technologies AGTrans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
228
  • 1:$14.3180
IPW65R037C6XK
DISTI # IPW65R037C6FKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R037C6FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$8.6900
  • 1440:$8.7900
  • 960:$9.0900
  • 480:$9.4900
  • 240:$9.7900
IPW65R037C6FKSA1
DISTI # 50Y2087
Infineon Technologies AGPower MOSFET, N Channel, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V RoHS Compliant: Yes26
  • 500:$10.0300
  • 250:$10.7200
  • 100:$11.2700
  • 50:$12.0300
  • 25:$12.8000
  • 10:$13.3500
  • 1:$14.5200
IPW65R037C6
DISTI # 726-IPW65R037C6
Infineon Technologies AGMOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
RoHS: Compliant
238
  • 1:$14.3800
  • 10:$13.2200
  • 25:$12.6700
  • 100:$11.1600
  • 250:$10.6100
  • 500:$9.9300
IPW65R037C6FKSA1
DISTI # 726-IPW65R037C6FKSA1
Infineon Technologies AGMOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6
RoHS: Compliant
240
  • 1:$14.3800
  • 10:$13.2200
  • 25:$12.6700
  • 100:$11.1600
  • 250:$10.6100
  • 500:$9.9300
IPW65R037C6FKSA1Infineon Technologies AGSingle N-Channel 650 V 37 mOhm 330 nC CoolMOS Power Mosfet - TO-247-3
RoHS: Not Compliant
5Tube
  • 240:$8.0600
IPW65R037C6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247
RoHS: Compliant
9
  • 1000:$8.2400
  • 500:$8.6700
  • 100:$9.0300
  • 25:$9.4100
  • 1:$10.1400
IPW65R037C6FKSA1
DISTI # 1107474
Infineon Technologies AGMOSFET NCHANNEL 700V 83.2A COOLMOS TO247, EA39
  • 50:£8.3400
  • 20:£8.5000
  • 10:£8.6900
  • 2:£9.2200
  • 1:£10.5000
IPW65R037C6FKSA1
DISTI # 1107474P
Infineon Technologies AGMOSFET NCHANNEL 700V 83.2A COOLMOS TO247, TU120
  • 50:£8.3400
  • 20:£8.5000
  • 10:£8.6900
  • 2:£9.2200
IPW65R037C6FKSA1
DISTI # 2480874
Infineon Technologies AGMOSFET, N-CH, 650V, 83.2A, TO-247-3
RoHS: Compliant
24
  • 500:$14.9600
  • 250:$15.9900
  • 100:$16.8200
  • 25:$19.0900
  • 10:$19.9200
  • 1:$21.6700
IPW65R037C6FKSA1
DISTI # 2480874
Infineon Technologies AGMOSFET, N-CH, 650V, 83.2A, TO-247-321
  • 100:£8.6100
  • 50:£9.1900
  • 10:£9.7600
  • 5:£11.0800
  • 1:£11.5200
IPW65R037C6FKSA1
DISTI # XSKDRABV0052136
Infineon Technologies AG 
RoHS: Compliant
720 in Stock0 on Order
  • 720:$12.0000
  • 240:$12.8600
IPW65R037C6FKSA1
DISTI # IPW65R037C6
Infineon Technologies AGN-Ch 650V 83,2A 500W 0,037R TO247
RoHS: Compliant
0
  • 1:€12.5000
  • 10:€9.5000
  • 50:€8.0000
  • 100:€7.6500
图片 型号 描述
LTC6084CMS8#PBF

Mfr.#: LTC6084CMS8#PBF

OMO.#: OMO-LTC6084CMS8-PBF

Precision Amplifiers 2x 1.5MHz, R2R, CMOS Ampli?ers
M41T00SM6F

Mfr.#: M41T00SM6F

OMO.#: OMO-M41T00SM6F

Real Time Clock 2.0 to 5.5V 64 (8X8)
KTA1550ESQ-TR

Mfr.#: KTA1550ESQ-TR

OMO.#: OMO-KTA1550ESQ-TR

TVS Diodes / ESD Suppressors Dual-channel Active choke for EMI suppression w/ Integrated ESD Protection
FGH40N60SMDF

Mfr.#: FGH40N60SMDF

OMO.#: OMO-FGH40N60SMDF

IGBT Transistors 600V/40A Field Stop IGBT ver. 2
NVD5C668NLT4G

Mfr.#: NVD5C668NLT4G

OMO.#: OMO-NVD5C668NLT4G

MOSFET T6 60V LL DPAK
IRLML6402TRPBF

Mfr.#: IRLML6402TRPBF

OMO.#: OMO-IRLML6402TRPBF

MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl
PIC24FJ512GB606-I/MR

Mfr.#: PIC24FJ512GB606-I/MR

OMO.#: OMO-PIC24FJ512GB606-I-MR

16-bit Microcontrollers - MCU 16-Bit MCU, 16 MIPS 512K Flash, 32K RAM
BD750L2FP-CE2

Mfr.#: BD750L2FP-CE2

OMO.#: OMO-BD750L2FP-CE2

LDO Voltage Regulators IC Pwr Linear Reg Single Output LDO
GRM188R60J106ME84D

Mfr.#: GRM188R60J106ME84D

OMO.#: OMO-GRM188R60J106ME84D

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 6.3volts X5R 20%
GRM0335C1H221JA01D

Mfr.#: GRM0335C1H221JA01D

OMO.#: OMO-GRM0335C1H221JA01D

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 220pF 50volts C0G 5%
可用性
库存:
240
订购:
2223
输入数量:
IPW65R037C6FKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$14.38
US$14.38
10
US$13.22
US$132.20
25
US$12.67
US$316.75
100
US$11.16
US$1 116.00
250
US$10.61
US$2 652.50
500
US$9.93
US$4 965.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
从...开始
最新产品
Top