FCPF11N60NT

FCPF11N60NT
Mfr. #:
FCPF11N60NT
制造商:
ON Semiconductor
描述:
MOSFET N-CH 600V 10.8A TO220F
生命周期:
制造商新产品。
数据表:
FCPF11N60NT 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
仙童
产品分类
FET - 单
打包
管子
单位重量
0.080072 oz
包装盒
TO-220-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
32.1 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
10 ns
上升时间
9.1 ns
Id 连续漏极电流
10.8 A
Vds-漏-源-击穿电压
600 V
Rds-On-Drain-Source-Resistance
255 mOhms
晶体管极性
N通道
典型关断延迟时间
42 ns
典型开启延迟时间
13.6 ns
正向跨导最小值
13.5 S
Tags
FCPF11N60NT, FCPF11N60N, FCPF11N60, FCPF11, FCPF1, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail
***Components
MOSFET N-Kanal 600V 10,8A TO220F
***i-Key
MOSFET N-CH 600V 10.8A TO220F
***ark
RAIL / SupreMOS 11A in TO220F
***inecomponents.com
SupreMOS 11A in TO220F
***nell
MOSFET, N CH, 600V, 10.8A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:32.4A
***ment14 APAC
MOSFET, N CH, 600V, 10.8A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:32.4A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型号 制造商 描述 库存 价格
FCPF11N60NT
DISTI # V36:1790_06359329
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1000
  • 5000:$1.7000
  • 1000:$1.8350
FCPF11N60NT
DISTI # FCPF11N60NT-ND
ON SemiconductorMOSFET N-CH 600V 10.8A TO220F
RoHS: Compliant
Min Qty: 1
Container: Tube
708In Stock
  • 1000:$2.1010
  • 500:$2.4912
  • 100:$3.0765
  • 10:$3.7520
  • 1:$4.2000
FCPF11N60NT
DISTI # 29437016
ON Semiconductor600V N-CHANNEL MOSFET SUPREMOS1000
  • 1000:$1.8350
FCPF11N60NT
DISTI # FCPF11N60NT
ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail (Alt: FCPF11N60NT)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.7900
  • 50:€1.7900
  • 100:€1.6900
  • 500:€1.5900
  • 1000:€1.4900
FCPF11N60NT
DISTI # FCPF11N60NT
ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60NT)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.6900
  • 2000:$1.6900
  • 4000:$1.6900
  • 6000:$1.6900
  • 10000:$1.5900
FCPF11N60NT
DISTI # FCPF11N60NT
ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail (Alt: FCPF11N60NT)
RoHS: Compliant
Min Qty: 1000
Asia - 0
  • 1000:$1.6882
  • 2000:$1.6233
  • 3000:$1.5632
  • 5000:$1.5073
  • 10000:$1.4553
  • 25000:$1.4068
  • 50000:$1.3838
FCPF11N60NT
DISTI # 64R2980
ON SemiconductorMOSFET Transistor, N Channel, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V0
  • 1:$3.9600
  • 10:$3.2100
  • 100:$2.6700
  • 500:$2.4100
  • 1000:$2.0500
  • 2500:$1.9600
  • 10000:$1.8500
FCPF11N60NT
DISTI # 512-FCPF11N60NT
ON SemiconductorMOSFET SupreMOS 11A
RoHS: Compliant
837
  • 1:$3.6200
  • 10:$3.0700
  • 100:$2.6700
  • 250:$2.5300
  • 500:$2.2700
FCPF11N60NTFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
16493
  • 1000:$2.2400
  • 500:$2.3500
  • 100:$2.4500
  • 25:$2.5600
  • 1:$2.7500
FCPF11N60NT
DISTI # C1S541901518237
ON SemiconductorTrans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
1000
  • 1000:$1.8350
图片 型号 描述
FCPF190N60

Mfr.#: FCPF190N60

OMO.#: OMO-FCPF190N60-ON-SEMICONDUCTOR

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Mfr.#: FCPF11N60,11N60,FCPF11N6

OMO.#: OMO-FCPF11N60-11N60-FCPF11N6-1190

全新原装
FCPF11N60,FCPF11N65

Mfr.#: FCPF11N60,FCPF11N65

OMO.#: OMO-FCPF11N60-FCPF11N65-1190

全新原装
FCPF11N60CT

Mfr.#: FCPF11N60CT

OMO.#: OMO-FCPF11N60CT-1190

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Mfr.#: FCPF11N60N

OMO.#: OMO-FCPF11N60N-1190

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Mfr.#: FCPF13MN60NT

OMO.#: OMO-FCPF13MN60NT-1190

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Mfr.#: FCPF13N60N

OMO.#: OMO-FCPF13N60N-1190

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FCPF190N60F

Mfr.#: FCPF190N60F

OMO.#: OMO-FCPF190N60F-1190

全新原装
FCPF1N60

Mfr.#: FCPF1N60

OMO.#: OMO-FCPF1N60-1190

全新原装
FCPF11N65_G

Mfr.#: FCPF11N65_G

OMO.#: OMO-FCPF11N65-G-ON-SEMICONDUCTOR

INTEGRATED CIRCUIT
可用性
库存:
Available
订购:
2500
输入数量:
FCPF11N60NT的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.78
US$1.78
10
US$1.70
US$16.96
100
US$1.61
US$160.65
500
US$1.52
US$758.65
1000
US$1.43
US$1 428.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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