DMN1019USN-13

Mfr. #:: DMN1019USN-13
制造商:: Diodes Incorporated
描述:: MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
生命周期:: 制造商新产品。
数据表:: DMN1019USN-13 数据表
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产品属性
属性值

制造商: 二极管公司

产品分类: FET - 单

系列: DMN10

打包: Digi-ReelR 替代包装

单位重量: 0.000282 oz

安装方式: 贴片/贴片

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: SC-59

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 680mW

晶体管型: 1 N-Channel

漏源电压 Vdss: 12V

输入电容-Ciss-Vds: 2426pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 9.3A (Ta)

Rds-On-Max-Id-Vgs: 10 mOhm @ 9.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

栅极电荷-Qg-Vgs: 50.6nC @ 8V

钯功耗: 1.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 16.8 ns

上升时间: 57.6 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 9.3 A

Vds-漏-源-击穿电压: 12 V

VGS-th-Gate-Source-Threshold-Voltage: 0.53 V

Rds-On-Drain-Source-Resistance: 41 mOhms

晶体管极性: N通道

典型关断延迟时间: 22.2 ns

典型开启延迟时间: 7.6 ns

Qg-门电荷: 50.6 nC

通道模式: 增强

Tags: DMN1019US, DMN1019, DMN101, DMN10, DMN1, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN1019USN-13 描述

***ical: Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R

***et: Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R

***i-Key: MOSFET N-CH 12V 9.3A SC59

***ure Electronics: N-CH 12V 9.3A SC59

***ark: Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:n Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power Dissipation Pd:680mW; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, N-CH, 12V, 9.3A, SC-59; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:12V; Rezystancja przewodzenia Rds(on):0.007ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:530mV; Straty mocy Pd:680mW; Rodzaj obudowy tranzystora:SC-59; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2019)

Market price

型号	制造商	描述	库存	价格
DMN1019USN-13 DISTI # DMN1019USN-13DITR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	On Order	10000:$0.1168
DMN1019USN-13 DISTI # DMN1019USN-13DICT-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13	Diodes Incorporated	Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN1019USN-13) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.0919 20000:$0.0869 40000:$0.0829 60000:$0.0789 100000:$0.0769
DMN1019USN-7 DISTI # 621-DMN1019USN-7	Diodes Incorporated	MOSFET 12V N-Ch Enh FET 2426pF 27.3nC RoHS: Compliant	43527	1:$0.4300 10:$0.3250 100:$0.1760 1000:$0.1320 3000:$0.1140
DMN1019USN-13 DISTI # 621-DMN1019USN-13	Diodes Incorporated	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W RoHS: Compliant	0	10000:$0.1070

图片	型号	描述
	Mfr.#: DMN1019UFDE-7 OMO.#: OMO-DMN1019UFDE-7	MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
	Mfr.#: DMN1017UCP3-7 OMO.#: OMO-DMN1017UCP3-7	MOSFET MOSFETBVDSS: 8V-24V
	Mfr.#: DMN1019UVT-7 OMO.#: OMO-DMN1019UVT-7	MOSFET 12V Enh Mode FET
	Mfr.#: DMN1019UVT-13 OMO.#: OMO-DMN1019UVT-13	MOSFET 12V Enh Mode FET
	Mfr.#: DMN1016UCB6-7 OMO.#: OMO-DMN1016UCB6-7	MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
	Mfr.#: DMN1019USN OMO.#: OMO-DMN1019USN-1190	全新原装
	Mfr.#: DMN1019USN-7-F OMO.#: OMO-DMN1019USN-7-F-1190	全新原装
	Mfr.#: DMN1016UCB6-7 OMO.#: OMO-DMN1016UCB6-7-DIODES	MOSFET N-CH 12V 5.5A U-WLB1510-6
	Mfr.#: DMN1019USN-7 OMO.#: OMO-DMN1019USN-7-DIODES	IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
	Mfr.#: DMN1019USN-13 OMO.#: OMO-DMN1019USN-13-DIODES	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W

DMN1019USN-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes