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FGPF4565

FGPF4565
Mfr. #:
FGPF4565
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors FS1TIGBT TO220F 650V
生命周期:
制造商新产品。
数据表:
FGPF4565 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGPF4565 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220F
安装方式：
通孔
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.88 V
最大栅极发射极电压：
25 V
25 C 时的连续集电极电流：
30 A
Pd - 功耗：
30 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
FGPF4565
打包：
管子
连续集电极电流 Ic 最大值：
170 A
品牌：
安森美半导体/飞兆半导体
栅极-发射极漏电流：
400 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
单位重量：
0.080072 oz
Tags
FGPF45, FGPF4, FGPF, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).
***ical
Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3
***ineon SCT
650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 14A 33300mW 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
650 V, 15 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 33.3W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 30 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***ical
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
***el Electronic
In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
***ark
IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
型号 制造商 描述 库存 价格
FGPF4565
DISTI # V99:2348_06359510		ON Semiconductor650V FS TRENCH FOR IPL APPLICA1150
  • 10000:$0.9108
  • 5000:$0.9421
  • 2500:$0.9790
  • 1000:$1.0215
  • 500:$1.2053
  • 100:$1.3561
  • 10:$1.6204
  • 1:$1.8428
FGPF4565
DISTI # FGPF4565-ND		ON SemiconductorIGBT 650V 30W TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		268In Stock
  • 1000:$1.1305
  • 500:$1.3643
  • 100:$1.6606
  • 10:$2.0660
  • 1:$2.3000
FGPF4565
DISTI # 26731039		ON Semiconductor650V FS TRENCH FOR IPL APPLICA3000
  • 1000:$1.1962
FGPF4565
DISTI # 25845358		ON Semiconductor650V FS TRENCH FOR IPL APPLICA1150
  • 1000:$1.0215
  • 500:$1.2053
  • 100:$1.3561
  • 10:$1.6204
  • 7:$1.8428
FGPF4565
DISTI # FGPF4565		ON SemiconductorTrans IGBT Chip N-CH 650V 170A 3-Pin TO-220F Tube - Rail/Tube (Alt: FGPF4565)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.9699
  • 2000:$0.9639
  • 4000:$0.9509
  • 6000:$0.9389
  • 10000:$0.9159
FGPF4565
DISTI # 512-FGPF4565		ON SemiconductorIGBT Transistors FS1TIGBT TO220F 650V
RoHS: Compliant		571
  • 1:$2.1900
  • 10:$1.8600
  • 100:$1.4900
  • 500:$1.3000
  • 1000:$1.0800
  • 2500:$1.0100
  • 5000:$0.9660
FGPF4565Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		891
  • 1000:$1.2200
  • 500:$1.2900
  • 100:$1.3400
  • 25:$1.4000
  • 1:$1.5000
FGPF4565
DISTI # C1S541901397111		ON SemiconductorTrans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		1150
  • 1000:$1.0215
  • 500:$1.2053
  • 10:$1.6204
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CK45-R3DD331K-NRA

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Mfr.#: CPF0603B33RE1

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可用性
库存:
512
订购:
2495
输入数量:
FGPF4565的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.18
US$2.18
10
US$1.85
US$18.50
100
US$1.48
US$148.00
500
US$1.30
US$650.00
1000
US$1.07
US$1 070.00
2000
US$1.00
US$2 000.00
5000
US$0.97
US$4 830.00
10000
US$0.93
US$9 290.00
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