OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

GA10SICP12-263

GA10SICP12-263
Mfr. #:
GA10SICP12-263
制造商:
GeneSiC Semiconductor
描述:
MOSFET 1200V 25A Std SIC CoPak
生命周期:
制造商新产品。
数据表:
GA10SICP12-263 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GA10SICP12-263 更多信息
产品属性
属性值
制造商：
GeneSiC半导体
产品分类：
MOSFET
RoHS：
Y
技术：
碳化硅
安装方式：
贴片/贴片
包装/案例：
TO-263-7
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
1.2 kV
Id - 连续漏极电流：
25 A
Rds On - 漏源电阻：
100 mOhms
Vgs - 栅源电压：
30 V
Qg - 门电荷：
55 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
170 W
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
4.597 mm
长度：
10.668 mm
类型：
晶体管/肖特基二极管 Co-Pack
宽度：
9.169 mm
品牌：
GeneSiC半导体
产品类别：
MOSFET
出厂包装数量：
50
子类别：
MOSFET
单位重量：
0.056438 oz
Tags
GA10S, GA10, GA1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eSiC Semiconductor
SiC Junction Transistor 1200V 100mΩ TO-263-7
*** Electronics
TRANS SJT 1200V 25A TO263-7
***ark
T &R / Sic C P
***ure Electronics
Single N-Channel 40 V 1.4 mOhm 150 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***el Electronic
Transistor: N-MOSFET; unipolar; 40V; 195A; 231W; D2PAK-7
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 231 W
***Yang
Trans MOSFET N-CH 40V 295A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel
***ark
T&R / MOSFET, 40V, 195A, 1.4 mOhm, 150 nC Qg, D2-7pin
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ow.cn
Half Bridge Motor Driver Automotive 8-Pin(7+Tab) TO-263 T/R
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers TRILITH IC / NOVALITH IC
***ark
Motor Driver, Half Bridge, To-263-7; Motor Type:half Bridge; No. Of Outputs:1Outputs; Output Current:-; Output Voltage:-; Driver Case Style:to-263; No. Of Pins:7Pins; Supply Voltage Min:6V; Supply Voltage Max:40V; Operating Rohs Compliant: Yes
***ow.cn
Half Bridge Motor Driver Automotive 8-Pin(7+Tab) TO-263 T/R
***pmh
HALF BRIDGE BASED MOSFET DRIVER
*** Electronic Components
Gate Drivers TRILITH IC / NOVALITH IC
***or
BTN8980 - HIGH CURRENT PN HALF B
***ark
Motor Driver, Half Bridge, To-263-7; Motor Type:half Bridge; No. Of Outputs:1Outputs; Output Current:-; Output Voltage:-; Driver Case Style:to-263; No. Of Pins:7Pins; Supply Voltage Min:6V; Supply Voltage Max:40V; Operating Rohs Compliant: Yes
*** Source Electronics
Trans MOSFET N-CH Si 40V 295A 7-Pin(6+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK-7PIN
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
***ical
Trans MOSFET N-CH 40V 380A Automotive 7-Pin(6+Tab) D2PAK T/R
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 40V 240A D2PAK-7
***ment14 APAC
MOSFET, N-CH, 40V, 380A, D2PAK-7P; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; No. of Pins:7; MSL:MSL 1 - Unlimited
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
GeneSiC Silicon Carbide Junction Transistors/Schottky Diode Co-Packs are a hybrid silicon IGBT with a silicon carbide (SiC) rectifier in a module. GeneSiC uses the latest generation of low-loss IGBTs and pairs them with their silicon carbide diodes. Replacing the traditional silicon freewheeling diode (FWD) with silicon carbide schottky rectifiers offers revolutionary switching performance. These improvements will usher in a new era in power conversion applications. These devices are offered in TO-263-7L or SOT-227 packages.Learn More
型号 制造商 描述 库存 价格
GA10SICP12-263
DISTI # 1242-1318-ND		GeneSic Semiconductor IncTRANS SJT 1200V 25A TO263-7
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$28.8945
GA10SICP12-263
DISTI # 905-GA10SICP12-263		GeneSic Semiconductor IncMOSFET 1200V 25A Std SIC CoPak
RoHS: Compliant		58
  • 1:$39.1000
  • 5:$37.1700
  • 10:$36.1800
  • 25:$35.1700
  • 50:$33.2400
  • 100:$30.8900
  • 250:$28.3500
图片 型号 描述
OPA333AMDCKREP

Mfr.#: OPA333AMDCKREP

OMO.#: OMO-OPA333AMDCKREP

 Operational Amplifiers - Op Amps Mil Enhance 1.8V Micropwr CMOS Op Amp
INA139NA/3K

Mfr.#: INA139NA/3K

OMO.#: OMO-INA139NA-3K

 Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
LMG1205YFXR

Mfr.#: LMG1205YFXR

OMO.#: OMO-LMG1205YFXR

 Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

 MOSFET SIC MOS 80MW 1200V
FES10J

Mfr.#: FES10J

OMO.#: OMO-FES10J

 Rectifiers 10A 600V Ultra Fast
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
C3M0280090J-TR

Mfr.#: C3M0280090J-TR

OMO.#: OMO-C3M0280090J-TR

 MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm
C2012X8R1C105K125AE

Mfr.#: C2012X8R1C105K125AE

OMO.#: OMO-C2012X8R1C105K125AE

 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0805 16V 1uF X8R 10% T: 1.25mm
INA139NA/3K

Mfr.#: INA139NA/3K

OMO.#: OMO-INA139NA-3K-TEXAS-INSTRUMENTS

 全新原装
OPA333AMDCKREP

Mfr.#: OPA333AMDCKREP

OMO.#: OMO-OPA333AMDCKREP-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps Mil Enhance 1.8V Micropwr CMOS Op Amp
可用性
库存:
57
订购:
2040
输入数量:
GA10SICP12-263的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$39.10
US$39.10
5
US$37.17
US$185.85
10
US$36.18
US$361.80
25
US$35.17
US$879.25
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
从...开始
最新产品
More Newest Products
Top