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IGW50N65F5FKSA1

IGW50N65F5FKSA1
Mfr. #:
IGW50N65F5FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IGW50N65F5FKSA1 数据表
交货:
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更多信息:
IGW50N65F5FKSA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
IGBT - 单
系列
战壕止损
打包
管子
部分别名
IGW50N65F5 SP000973426
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
PG-TO247-3
配置
单身的
最大功率
305W
反向恢复时间trr
-
电流收集器 Ic-Max
80A
电压收集器发射极击穿最大值
650V
IGBT型
-
电流收集器脉冲Icm
150A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 50A
开关能源
490μJ (on), 160μJ (off)
栅极电荷
120nC
Td-on-off-25°C
21ns/175ns
测试条件
400V, 25A, 12 Ohm, 15V
钯功耗
305 W
最高工作温度
+ 175 C
最低工作温度
- 40 C
集电极-发射极-电压-VCEO-Max
650 V
集电极-发射极-饱和-电压
1.6 V
25-C 时的连续集电极电流
80 A
栅极-发射极-漏电流
100 nA
最大栅极发射极电压
20 V
连续集电极电流 Ic-Max
56 A
Tags
IGW50N65F, IGW50N65, IGW50N, IGW5, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW50N65F5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ical
Trans IGBT Chip N-CH 650V 80A
***i-Key
IGBT 650V 80A 305W PG-TO247-3
***ronik
IGBT 650V 50A 1.6V TO247-3
***ark
IGBT, 650V, 50A, TO247-3
***ukat
650V 80A 305W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
IGW50N65F5FKSA1
DISTI # V99:2348_06378872		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 1:$3.1920
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 1200:$2.6891
  • 720:$3.1885
  • 240:$3.7455
  • 10:$4.5710
  • 1:$5.0900
IGW50N65F5FKSA1
DISTI # 32700397		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 5:$2.1655
IGW50N65F5FKSA1
DISTI # 26986810		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 3:$3.1920
IGW50N65F5FKSA1
DISTI # SP000973426		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973426)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1:€2.5900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.1900
  • 100:€2.0900
  • 500:€1.9900
  • 1000:€1.8900
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65F5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.5900
  • 480:$2.4900
  • 960:$2.3900
  • 1440:$2.2900
  • 2400:$2.2900
IGW50N65F5
DISTI # 726-IGW50N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		216
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 726-IGW50N65F5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		0
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 1107426P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU3068
  • 400:£1.8450
  • 200:£1.8900
  • 80:£1.9400
  • 20:£2.0930
IGW50N65F5FKSA1
DISTI # IGW50N65F5		Infineon Technologies AG650V 80A 305W TO247
RoHS: Compliant		230
  • 1:€5.9500
  • 10:€2.9500
  • 50:€1.9500
  • 100:€1.8800
IGW50N65F5FKSA1
DISTI # 2363279		Infineon Technologies AGIGBT, 650V, 50A, TO247-3
RoHS: Compliant		88
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8400
  • 10:£2.1200
  • 1:£2.8100
IGW50N65F5FKSA1
DISTI # XSKDRABS0030187		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$3.2400
  • 240:$3.4800
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可用性
库存:
Available
订购:
4500
输入数量:
IGW50N65F5FKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.36
US$2.36
10
US$2.24
US$22.37
100
US$2.12
US$211.95
500
US$2.00
US$1 000.90
1000
US$1.88
US$1 884.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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