IPD80R1K0CEBTMA1

Mfr. #:: IPD80R1K0CEBTMA1
制造商:: Infineon Technologies
描述:: MOSFET N-Ch 800V 5.7A DPAK-2
生命周期:: 制造商新产品。
数据表:: IPD80R1K0CEBTMA1 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: XPD80R1

打包: 卷轴

部分别名: IPD80R1K0CE SP001100606

单位重量: 0.139332 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 83 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8 ns

上升时间: 15 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 5.7 A

Vds-漏-源-击穿电压: 800 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 950 mOhms

晶体管极性: N通道

典型关断延迟时间: 72 ns

典型开启延迟时间: 25 ns

Qg-门电荷: 31 nC

Tags: IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R1K0CEBTMA1 描述

***et Europe: Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R

***i-Key: MOSFET N-CH 800V 5.7A TO252-3

***ronik: N-CH 800V 5,7A 950mOhm TO252

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

Market price

型号	制造商	描述	库存	价格
IPD80R1K0CEBTMA1 DISTI # IPD80R1K0CEBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD80R1K0CEBTMA1 DISTI # IPD80R1K0CEBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD80R1K0CEBTMA1 DISTI # IPD80R1K0CEBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD80R1K0CEBTMA1 DISTI # SP001100606	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001100606) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 10	25000:€0.5539 15000:€0.5919 10000:€0.6789 5000:€0.8139 2500:€0.9699

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