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SIHG22N50D-GE3

SIHG22N50D-GE3
Mfr. #:
SIHG22N50D-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 500V Vds 30V Vgs TO-247AC
生命周期:
制造商新产品。
数据表:
SIHG22N50D-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG22N50D-GE3 DatasheetSIHG22N50D-GE3 Datasheet (P4-P6)SIHG22N50D-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SIHG22N50D-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247AC-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
500 V
Id - 连续漏极电流：
22 A
Rds On - 漏源电阻：
230 mOhms
Vgs th - 栅源阈值电压：
5 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
49 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
312 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
20.82 mm
长度：
15.87 mm
系列：
D
宽度：
5.31 mm
品牌：
威世 / Siliconix
秋季时间：
40 ns
产品类别：
MOSFET
上升时间：
42 ns
出厂包装数量：
500
子类别：
MOSFET
典型关断延迟时间：
47 ns
典型的开启延迟时间：
21 ns
单位重量：
1.340411 oz
Tags
SIHG22N5, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC Vishay SiHG22N50D-GE3
***ure Electronics
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
***et Europe
Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC
***ical
Trans MOSFET N-CH 500V 22A
***i-Key
MOSFET N-CH 500V 22A TO-247AC
***ark
MOSFET, N-CH, 500V, 22A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
型号 制造商 描述 库存 价格
SIHG22N50D-GE3
DISTI # V99:2348_09219131		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 1000:$2.3720
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 1:$4.1650
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 22A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		18In Stock
  • 1000:$2.6861
  • 500:$3.1849
  • 100:$3.9332
  • 10:$4.7970
  • 1:$5.3700
SIHG22N50D-GE3
DISTI # 25872833		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 3:$4.1650
SIHG22N50D-GE3
DISTI # 27549453		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		75
  • 29:$2.2125
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N50D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$2.4900
  • 1000:$2.3900
  • 2000:$2.2900
  • 3000:$2.1900
  • 5000:$2.1900
SIHG22N50D-GE3
DISTI # 62W0515		Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V RoHS Compliant: Yes75
  • 1:$1.7700
  • 10:$1.7700
  • 25:$1.7700
  • 50:$1.7700
  • 100:$1.7700
  • 500:$1.7700
  • 1000:$1.7700
  • 2500:$1.7700
SIHG22N50D-GE3
DISTI # 78-SIHG22N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant		500
  • 1:$4.8900
  • 10:$4.0500
  • 100:$3.3400
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2500:$2.3200
SIHG22N50D-GE3
DISTI # 7879197P		Vishay IntertechnologiesMOSFET N-CH 500V 22A LOW CAP. TO247AC, RL42
  • 10:£2.5300
  • 20:£2.5200
  • 50:£2.5100
  • 250:£2.3400
SIHG22N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		Europe - 375
    SIHG22N50DGE3Vishay Siliconix 
    RoHS: Compliant    		Europe - 125
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:$7.7400
      • 10:$6.4100
      • 100:$5.2900
      • 250:$5.1200
      • 500:$4.5900
      • 1000:$3.8800
      • 2500:$3.6800
      • 5000:$3.5500
      SIHG22N50D-GE3
      DISTI # C1S803601945738      		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      RoHS: Compliant      		500
      • 500:$2.7350
      • 100:$3.0780
      • 10:$3.5890
      • 1:$4.1650
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:£3.7000
      • 10:£2.5400
      • 100:£2.4500
      • 250:£2.3600
      • 500:£2.2200
      图片 型号 描述
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3

      		 MOSFET 500V Vds 30V Vgs TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60EF-GE3

      Mfr.#: SIHG22N60EF-GE3

      OMO.#: OMO-SIHG22N60EF-GE3

      		 MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
      SIHG22N60EL-GE3

      Mfr.#: SIHG22N60EL-GE3

      OMO.#: OMO-SIHG22N60EL-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60AEL-GE3

      Mfr.#: SIHG22N60AEL-GE3

      OMO.#: OMO-SIHG22N60AEL-GE3-VISHAY

      		 MOSFET N-CHAN 600V
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3-VISHAY

      		 MOSFET N-CH 500V 22A TO-247AC
      SIHG22N50DGE3

      Mfr.#: SIHG22N50DGE3

      OMO.#: OMO-SIHG22N50DGE3-1190

      		 Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 21A TO247AC
      SIHG22N60S-E3,22N60

      Mfr.#: SIHG22N60S-E3,22N60

      OMO.#: OMO-SIHG22N60S-E3-22N60-1190

      		 全新原装
      SIHG22N60AE-GE3

      Mfr.#: SIHG22N60AE-GE3

      OMO.#: OMO-SIHG22N60AE-GE3-VISHAY

      		 MOSFET N-CH 600V 20A TO247AC
      可用性
      库存:
      370
      订购:
      2353
      输入数量:
      SIHG22N50D-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$4.88
      US$4.88
      10
      US$4.04
      US$40.40
      100
      US$3.33
      US$333.00
      250
      US$3.22
      US$805.00
      500
      US$2.89
      US$1 445.00
      1000
      US$2.44
      US$2 440.00
      2500
      US$2.31
      US$5 775.00
      5000
      US$2.23
      US$11 150.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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