FFSP20120A

Mfr. #:: FFSP20120A
制造商:: ON Semiconductor
描述:: Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
生命周期:: 制造商新产品。
数据表:: FFSP20120A 数据表
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更多信息:: FFSP20120A 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: 二极管、整流器 - 单

系列: -

产品: 肖特基碳化硅二极管

打包: 管子

安装方式: 通孔

包装盒: TO-220-2

技术: 碳化硅

安装型: 通孔

供应商-设备-包: TO-220-2

配置: 单身的

速度: Fast Recovery = 200mA (Io)

二极管型: 碳化硅肖特基

电流反向泄漏-Vr: 200μA @ 1200V

电压正向 Vf-Max-If: 1.75V @ 20A

电压-直流-反向-Vr-Max: 1200V (1.2kV)

电流平均整流Io: 20A

反向恢复时间trr: -

电容-Vr-F: 1220pF @ 1V, 100KHz

工作温度结: -55°C ~ 175°C

钯功耗: 340 W

最高工作温度: + 175 C

最低工作温度: - 55 C

Vf-正向电压: 1.45 V

Vr-反向电压: 1.2 kV

Ir-反向电流: 200 uA

如果正向电流: 20 A

Vrrm 重复反向电压: 1.2 kV

Ifsm-正向浪涌电流: 135 A

Tags: FFSP2, FFSP, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSP20120A 更多信息

FFSP SiC Schottky Diodes: ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes: ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Market price

型号	制造商	描述	库存	价格
FFSP20120A DISTI # V99:2348_16116319	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	1000:$6.0350 500:$6.4860 250:$7.3180 100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A-ND	ON Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220-2 RoHS: Compliant Min Qty: 1 Container: Tube	565In Stock	100:$8.5843 10:$10.3690 1:$11.4800
FFSP20120A DISTI # 25895795	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A - Rail/Tube (Alt: FFSP20120A) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$5.9900 1600:$5.8900 3200:$5.7900 4800:$5.7900 8000:$5.5900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A (Alt: FFSP20120A) RoHS: Compliant Min Qty: 1	Europe - 0	1:€7.3900 10:€6.6900 25:€6.4900 50:€6.1900 100:€5.9900 500:€5.7900 1000:€5.3900
FFSP20120A DISTI # 512-FFSP20120A	ON Semiconductor	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode RoHS: Compliant	242	1:$10.9300 10:$9.8800 25:$9.4200 100:$8.1800 250:$7.8100 500:$7.1200 1000:$6.2100
FFSP20120A DISTI # C1S541901575560	ON Semiconductor	Diode Schottky 1.2KV 20A 2-Pin(2+Tab) TO-220 Tube	240	100:$7.6160 25:$8.4210 10:$8.9160 1:$9.6910

图片	型号	描述
	Mfr.#: FFSP2065B-F085 OMO.#: OMO-FFSP2065B-F085	Schottky Diodes & Rectifiers Auto SiC Schottky Diode, 650 V
	Mfr.#: FFSP2065A OMO.#: OMO-FFSP2065A	Schottky Diodes & Rectifiers SIC TO220 SBD 20A 650V
	Mfr.#: FFSP20120A OMO.#: OMO-FFSP20120A	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
	Mfr.#: FFSP20120A OMO.#: OMO-FFSP20120A-ON-SEMICONDUCTOR	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
	Mfr.#: FFSP2065A OMO.#: OMO-FFSP2065A-ON-SEMICONDUCTOR	DIODE SCHOTTKY 650V 25A TO220-2
	Mfr.#: FFSP2065B-F085 OMO.#: OMO-FFSP2065B-F085-1190	SIC DIODE 650V
	Mfr.#: FFSP20S120A OMO.#: OMO-FFSP20S120A-1190	全新原装

FFSP20120A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes