SKM75GB063D

Mfr. #:: SKM75GB063D
制造商:: SEMIKRON
描述:: SEMITRANS, 600V, 100A
生命周期:: 制造商新产品。
数据表:: SKM75GB063D 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

制造商: 赛米控

产品分类: 集成电路芯片

Tags: SKM75GB, SKM75G, SKM75, SKM7, SKM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM75GB063D 描述

***ark: Transistor,igbt Power Module,half Bridge,600V V(Br)Ces,100A I(C)

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***ikron: not recommended for new design Features: N channel, homogeneous Si-structure (NPT-Non punch-through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also > 10kHz

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***p One Stop: Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray

***ment14 APAC: IGBT, LOW POW, 1200V, 15A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:130W

***ineon: EasyPIM 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

*** Stop Electro: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

***et: Motor / Motion / Ignition Controllers & Drivers 600V/50A

***inecomponents.com: 600V, 50A IGBT Module (Molding Type)

***el Electronic: IC REG CONV DDR BUS 1OUT 8MSOP

***omponent: Fairchild Semiconductor power module

***nell: IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V

***et: Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail

***el Electronic: IGBT MODULE 600V 100A 400W EPM7

***DA Technology Co., Ltd.: Product Description Demo for Development.

Market price

型号	制造商	描述	库存	价格
SKM 75 GB063D DISTI # 23H0689	SEMIKRON	TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,100A I(C)	0	100:$38.5200 50:$40.9800 25:$41.6000 10:$42.2100 5:$43.4500 1:$44.6800
SKM75GB063D DISTI # 71043329	SEMIKRON	SEMITRANS,600V,100A RoHS: Compliant	0	1:$77.7000 8:$73.6900 64:$68.9200 96:$64.7600 144:$61.0500
SKM75GB063D DISTI # SKM75GB063D	SEMIKRON	POWER IGBT TRANSISTOR RoHS: Compliant	0
SKM75GB063D	SEMIKRON	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	10

图片	型号	描述
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SKM75GB063D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes