SI4346DY-T1-E3

Mfr. #:: SI4346DY-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 30V 5.9A 8-SOIC
生命周期:: 制造商新产品。
数据表:: SI4346DY-T1-E3 数据表
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产品属性
属性值

制造商: 威世硅

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI4346DY-E3

单位重量: 0.006596 oz

安装方式: 贴片/贴片

包装盒: 8-SOIC (0.154", 3.90mm Width)

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-SO

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.31W

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 5.9A (Ta)

Rds-On-Max-Id-Vgs: 23 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2V @ 250μA

栅极电荷-Qg-Vgs: 10nC @ 4.5V

钯功耗: 1.31 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 5.9 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 23 mOhms

晶体管极性: N通道

典型关断延迟时间: 40 ns

典型开启延迟时间: 9 ns

通道模式: 增强

Tags: SI4346D, SI4346, SI434, SI43, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4346DY-T1-E3 描述

***ure Electronics: Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No

Market price

型号	制造商	描述	库存	价格
SI4346DY-T1-E3 DISTI # V72:2272_09216464	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	75000:$0.3116 30000:$0.3146 15000:$0.3175 6000:$0.3205 3000:$0.3234 1000:$0.3264 500:$0.3585 250:$0.3923 100:$0.4267 50:$0.4351 25:$0.4834 10:$0.4928 1:$0.5231
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4346DY-T1-E3 DISTI # 25790090	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	15000:$0.3413 6000:$0.3445 3000:$0.3477 1000:$0.3509 500:$0.3854 250:$0.4217 100:$0.4587 50:$0.4677 25:$0.5197 19:$0.5298
SI4346DY-T1-E3 DISTI # 19257946	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	995	167:$0.3750
SI4346DY-T1-E3 DISTI # 57J5650	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes	995	1:$0.3000 10:$0.3000 25:$0.3000 50:$0.3000 100:$0.3000 250:$0.3000 500:$0.3000
SI4346DY-T1-E3. DISTI # 30AC0153	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No	0
SI4346DY-T1-E3 DISTI # 70026210	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant	0	2500:$0.4400 5000:$0.4200 7500:$0.3900
SI4346DY-T1-E3 DISTI # 781-SI4346DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant	0
SI4346DY-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, SO	20	1:$1.7500
SI4346DY-T1-E3	---		7
SI4346DY-T1-E3	Vishay Intertechnologies		6969
SI4346DYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4346DY-T1-E3			281
SI4346DY-T1-E3 DISTI # 1839003	Vishay Intertechnologies	MOSFET,N CH,30V,5.9A,8-SOIC RoHS: Compliant	995	1000:£0.3290 500:£0.3360 100:£0.3430 50:£0.4530 5:£0.5100

图片	型号	描述
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
	Mfr.#: SI4346DY-T1 OMO.#: OMO-SI4346DY-T1-1190	全新原装
	Mfr.#: SI4346DY-T1-E3 OMO.#: OMO-SI4346DY-T1-E3-VISHAY	MOSFET N-CH 30V 5.9A 8-SOIC

SI4346DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes