SIR168DP-T1-GE3

SIR168DP-T1-GE3
Mfr. #:
SIR168DP-T1-GE3
制造商:
Vishay
描述:
IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIR168DP-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
威世
产品分类
集成电路芯片
系列
SIRxxxDP
打包
卷轴
部分别名
SIR168DP-GE3
单位重量
0.017870 oz
安装方式
贴片/贴片
包装盒
SO-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
34.7 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
40 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
4.4 mOhms
晶体管极性
N通道
Tags
SIR16, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 25.1A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:40A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0044ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SIR168DP-T1-GE3
DISTI # SIR168DP-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.4389
SIR168DP-T1-GE3
DISTI # 781-SIR168DP-GE3
Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10V
RoHS: Compliant
0
    SIR168DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10VAmericas -
      图片 型号 描述
      SIR168DP-T1-GE3

      Mfr.#: SIR168DP-T1-GE3

      OMO.#: OMO-SIR168DP-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
      SIR168DP

      Mfr.#: SIR168DP

      OMO.#: OMO-SIR168DP-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      SIR168DP-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.55
      US$0.55
      10
      US$0.52
      US$5.20
      100
      US$0.49
      US$49.26
      500
      US$0.47
      US$232.60
      1000
      US$0.44
      US$437.90
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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