IPW60R040C7XKSA1

IPW60R040C7XKSA1
Mfr. #:
IPW60R040C7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPW60R040C7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPW60R040C7XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-247-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
50 A
Rds On - 漏源电阻:
34 mOhms
Vgs th - 栅源阈值电压:
3 V
Vgs - 栅源电压:
20 V
Qg - 门电荷:
107 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
227 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
管子
高度:
21.1 mm
长度:
16.13 mm
系列:
CoolMOS C7
晶体管类型:
1 N-Channel
宽度:
5.21 mm
品牌:
英飞凌科技
秋季时间:
3.2 ns
产品类别:
MOSFET
上升时间:
11 ns
出厂包装数量:
240
子类别:
MOSFET
典型关断延迟时间:
81 ns
典型的开启延迟时间:
18.5 ns
第 # 部分别名:
IPW60R040C7 SP001296190
单位重量:
1.340411 oz
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型号 制造商 描述 库存 价格
IPW60R040C7XKSA1
DISTI # V99:2348_06377973
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
213
  • 240:$8.0290
  • 10:$9.3820
  • 1:$10.1310
IPW60R040C7XKSA1
DISTI # V36:1790_06377973
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 50A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    253In Stock
    • 1200:$8.3617
    • 720:$9.0294
    • 240:$10.4205
    • 10:$12.0900
    • 1:$13.2000
    IPW60R040C7XKSA1
    DISTI # 31924760
    Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    213
    • 240:$8.6312
    • 10:$10.0856
    • 1:$10.8908
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7
    Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW60R040C7)
    RoHS: Compliant
    Min Qty: 240
    Asia - 240
    • 240:$8.4308
    • 480:$8.1589
    • 720:$7.9039
    • 1200:$7.6644
    • 2400:$7.5500
    • 6000:$7.4390
    • 12000:$7.3312
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1
    Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R040C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 240:$7.1900
    • 480:$6.9900
    • 960:$6.6900
    • 1440:$6.4900
    • 2400:$6.3900
    IPW60R040C7XKSA1
    DISTI # SP001296190
    Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296190)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€7.5900
    • 10:€6.9900
    • 25:€6.6900
    • 50:€6.3900
    • 100:€6.1900
    • 500:€5.9900
    • 1000:€5.5900
    IPW60R040C7XKSA1
    DISTI # 13AC9095
    Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes89
    • 500:$8.5400
    • 250:$9.0500
    • 100:$9.4500
    • 50:$10.0100
    • 25:$10.5600
    • 10:$10.9800
    • 1:$11.8300
    IPW60R040C7XKSA1
    DISTI # 726-IPW60R040C7XKSA1
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    463
    • 1:$10.6100
    • 10:$9.7600
    • 25:$9.3500
    • 100:$8.2400
    • 250:$7.8400
    • 500:$7.3300
    IPW60R040C7XKSA1
    DISTI # 1702279
    Infineon Technologies AGMOSFET N-CH 600V 50A COOLMOS C7 TO-247, TU145
    • 300:£6.0470
    • 150:£6.3310
    • 30:£7.4300
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,50A,227W,PG-TO247-328
    • 1:$18.5200
    • 3:$15.9900
    • 10:$12.7500
    • 25:$11.1100
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7
    Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO247
    RoHS: Compliant
    0
    • 1:€10.7000
    • 10:€7.7000
    • 50:€6.2000
    • 100:€5.9100
    IPW60R040C7XKSA1
    DISTI # 2726076
    Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant
    0
    • 240:$14.0500
    • 10:$16.5300
    • 1:$18.1800
    IPW60R040C7XKSA1
    DISTI # 2726076
    Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant
    0
    • 100:£6.4800
    • 50:£6.9200
    • 10:£7.3500
    • 5:£8.3400
    • 1:£8.9300
    图片 型号 描述
    OPA2333SHKQ

    Mfr.#: OPA2333SHKQ

    OMO.#: OMO-OPA2333SHKQ

    Operational Amplifiers - Op Amps High Temp 1.8V Micro Pwr CMOS Op Amp
    FCH023N65S3-F155

    Mfr.#: FCH023N65S3-F155

    OMO.#: OMO-FCH023N65S3-F155

    MOSFET SuperFET3 650V 23 mOhm
    STW72N60DM2AG

    Mfr.#: STW72N60DM2AG

    OMO.#: OMO-STW72N60DM2AG

    MOSFET Automotive-grade N-channel 600 V, 0.037 Ohm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
    IPP410N30NAKSA1

    Mfr.#: IPP410N30NAKSA1

    OMO.#: OMO-IPP410N30NAKSA1

    MOSFET MV POWER MOS
    IPW65R041CFD

    Mfr.#: IPW65R041CFD

    OMO.#: OMO-IPW65R041CFD

    MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
    IDH20G65C6XKSA1

    Mfr.#: IDH20G65C6XKSA1

    OMO.#: OMO-IDH20G65C6XKSA1

    Schottky Diodes & Rectifiers SIC DIODES
    B32021A3472K000

    Mfr.#: B32021A3472K000

    OMO.#: OMO-B32021A3472K000

    Safety Capacitors .0047uF 10% 300Vac MKP Y2, LS 10MM
    OPA2333SHKQ

    Mfr.#: OPA2333SHKQ

    OMO.#: OMO-OPA2333SHKQ-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps High Temp 1.8V Micro Pwr CMOS Op Amp
    B32021A3472K000

    Mfr.#: B32021A3472K000

    OMO.#: OMO-B32021A3472K000-EPCOS

    Film Capacitors 4.7NF 10% 300V FILM CAP MKPY2
    IDH20G65C6XKSA1

    Mfr.#: IDH20G65C6XKSA1

    OMO.#: OMO-IDH20G65C6XKSA1-INFINEON-TECHNOLOGIES

    DIODE SCHOTTKY 650V 41A TO220-2
    可用性
    库存:
    Available
    订购:
    1984
    输入数量:
    IPW60R040C7XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$10.61
    US$10.61
    10
    US$9.76
    US$97.60
    25
    US$9.35
    US$233.75
    100
    US$8.24
    US$824.00
    250
    US$7.84
    US$1 960.00
    500
    US$7.33
    US$3 665.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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