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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SQJ968EP-T1-GE3 DISTI # V36:1790_14140430 | Vishay Intertechnologies | DUAL N-CHANNEL 60-V (D-S) 175C | 0 |
|
| SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 18A 8-Pin SO T/R (Alt: SQJ968EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 12000 |
|
| SQJ968EP-T1_GE3 DISTI # SQJ968EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 18A 8-Pin SO T/R - Tape and Reel (Alt: SQJ968EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ968EP-T1_GE3 DISTI # 78-SQJ968EP-T1_GE3 | Vishay Intertechnologies | MOSFET Dual N-Channel 60V AEC-Q101 Qualified RoHS: Compliant | 4840 |
|
| SQJ968EP-T1_GE3 DISTI # TMOS1159 | Vishay Intertechnologies | Dual N-CH 60V 33,6mOhm SO-8L RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| SQJ968EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 15000 | |
| SQJ968EP-T1-GE3 DISTI # 2400405 | Vishay Intertechnologies | MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant | 363 |
|
| SQJ968EP-T1-GE3 DISTI # 2400405 | Vishay Intertechnologies | MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8 RoHS: Compliant | 0 |
|
| SQJ968EP-T1_GE3 DISTI # XSKDRABV0027385 | Vishay Intertechnologies | RoHS: Compliant | 9000 in Stock0 on Order |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SQJ968EP-T1_GE3 OMO.#: OMO-SQJ968EP-T1-GE3 |
MOSFET Dual N-Channel 60V AEC-Q101 Qualified |
|
Mfr.#: SQJ968EP OMO.#: OMO-SQJ968EP-1190 |
全新原装 |
|
|
Mfr.#: SQJ968EP-T1-GE3 OMO.#: OMO-SQJ968EP-T1-GE3-1190 |
DUAL N-CHANNEL 60-V (D-S) 175C |
|
Mfr.#: SQJ968EP-T1_GE3 OMO.#: OMO-SQJ968EP-T1-GE3-VISHAY |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
|
Mfr.#: SQJ968EPT1GE3 OMO.#: OMO-SQJ968EPT1GE3-1190 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |