OMO ElectronicOMO Electronic
Expand menu
0 购物车

IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1
Mfr. #:
IPB029N06N3GE8187ATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 120A D2PAK-2
生命周期:
制造商新产品。
数据表:
IPB029N06N3GE8187ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
120 A
Rds On - 漏源电阻：
2.9 mOhms
Vgs th - 栅源阈值电压：
2 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
53 nC
Pd - 功耗：
188 W
配置：
单身的
打包：
卷轴
高度：
4.4 mm
长度：
10 mm
系列：
IPB029N06
晶体管类型：
1 N-Channel
宽度：
9.25 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
1000
子类别：
MOSFET
第 # 部分别名：
E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334
单位重量：
0.068654 oz
Tags
IPB029N06N3, IPB029, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***el Electronic
MOSFET N-CH 60V 120A TO263-3
***ineon SCT
60V, N-Ch, 2.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263
***ark
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes
*** Americas
N-CHANNEL 60-V (D-S) MOSFET
***ical
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
型号 制造商 描述 库存 价格
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.0671
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9629
  • 2000:$0.9289
  • 4000:$0.8949
  • 6000:$0.8649
  • 10000:$0.8499
IPB029N06N3GE8187ATMA1
DISTI # 726-IPB029N06N3GE818		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$1.9700
  • 10:$1.6800
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9700
IPB029N06N3GE8187ATMA1
DISTI # 8269200P		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL310
  • 50:£1.0490
  • 100:£0.9560
图片 型号 描述
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1

 MOSFET N-Ch 60V 120A D2PAK-2
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB029N06N3 G

Mfr.#: IPB029N06N3 G

OMO.#: OMO-IPB029N06N3-G-1190

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3G

Mfr.#: IPB029N06N3G

OMO.#: OMO-IPB029N06N3G-1190

 Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
可用性
库存:
Available
订购:
4000
输入数量:
IPB029N06N3GE8187ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
从...开始
Top