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IRG4BC30FDPBF

IRG4BC30FDPBF
Mfr. #:
IRG4BC30FDPBF
制造商:
Infineon Technologies
描述:
IGBT Transistors 600V Fast 1-8kHz
生命周期:
制造商新产品。
数据表:
IRG4BC30FDPBF 数据表
交货:
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HTML Datasheet:
IRG4BC30FDPBF DatasheetIRG4BC30FDPBF Datasheet (P4-P6)IRG4BC30FDPBF Datasheet (P7-P9)IRG4BC30FDPBF Datasheet (P10)
ECAD Model:
更多信息:
IRG4BC30FDPBF 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.59 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
31 A
Pd - 功耗：
100 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
打包：
管子
连续集电极电流 Ic 最大值：
31 A
高度：
8.77 mm
长度：
10.54 mm
宽度：
4.69 mm
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
第 # 部分别名：
SP001545780
单位重量：
0.211644 oz
Tags
IRG4BC30FD, IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ied Electronics & Automation
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
***ineon SCT
Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型号 制造商 描述 库存 价格
IRG4BC30FDPBF
DISTI # 33637326		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube847
  • 500:$2.2176
  • 250:$2.4750
  • 100:$2.6037
  • 50:$2.7324
  • 25:$2.8710
  • 10:$2.9997
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF-ND		Infineon Technologies AGIGBT 600V 31A 100W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		879In Stock
  • 1000:$1.9794
  • 500:$2.3469
  • 100:$2.7570
  • 10:$3.3650
  • 1:$3.7500
IRG4BC30FDPBF
DISTI # V36:1790_13892378		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube0
  • 1000000:$1.5690
  • 500000:$1.5730
  • 100000:$2.0600
  • 10000:$3.0150
  • 1000:$3.1800
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30FDPBF)
Min Qty: 216
Container: Bulk		Americas - 0
  • 2160:$1.3900
  • 648:$1.4900
  • 1080:$1.4900
  • 216:$1.5900
  • 432:$1.5900
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC30FDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
IRG4BC30FDPBF
DISTI # SP001545780		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001545780)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.2900
  • 500:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.5900
  • 10:€1.6900
  • 1:€1.7900
IRG4BC30FDPBF
DISTI # 38K2905		Infineon Technologies AGIGBT Single Transistor, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes918
  • 500:$2.2600
  • 250:$2.5300
  • 100:$2.6600
  • 50:$2.7900
  • 25:$2.9300
  • 10:$3.0600
  • 1:$3.6100
IRG4BC30FDPBF
DISTI # 70018428		Infineon Technologies AG600V FAST 1-8 KHZ COPACK IGBT IN A TO-220AB PACKAGE
RoHS: Compliant		0
  • 250:$4.9600
IRG4BC30FDPBF
DISTI # 942-IRG4BC30FDPBF		Infineon Technologies AGIGBT Transistors 600V Fast 1-8kHz
RoHS: Compliant		939
  • 1:$3.5700
  • 10:$3.0300
  • 100:$2.6300
  • 250:$2.5000
  • 500:$2.2400
  • 1000:$1.8900
  • 2000:$1.8000
IRG4BC30FDPBFInternational Rectifier 
RoHS: Not Compliant		130
  • 1000:$1.7800
  • 500:$1.8700
  • 100:$1.9500
  • 25:$2.0300
  • 1:$2.1900
IRG4BC30FDPBF
DISTI # 5411310		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 31A TO220AB, EA208
  • 500:£1.4100
  • 250:£1.5300
  • 100:£1.6200
  • 25:£1.8200
  • 1:£3.3500
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTransistor: IGBT,600V,31A,45W,TO220AB90
  • 50:$2.0900
  • 10:$2.3600
  • 3:$2.6600
  • 1:$2.9700
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AG600V 31A 100W TO220AB
RoHS: Compliant		530
  • 10:€1.6900
  • 50:€1.4900
  • 100:€1.3900
  • 200:€1.3400
IRG4BC30FDPBF
DISTI # IGBT1709		Infineon Technologies AGIGBT 600V17A 1,59VTO-220
RoHS: Compliant		Stock DE - 600Stock HK - 0Stock US - 0
  • 50:$2.0700
  • 150:$1.9500
  • 250:$1.9200
  • 450:$1.8800
  • 850:$1.7700
IRG4BC30FDPBFInternational Rectifier 
RoHS: Compliant		6150
    IRG4BC30FDPBF
    DISTI # 8650381    		Infineon Technologies AGIGBT, 600V, 31A, TO-220772
    • 500:£1.7400
    • 250:£1.9400
    • 100:£2.0500
    • 10:£2.3700
    • 1:£3.1300
    IRG4BC30FDPBF
    DISTI # 8650381    		Infineon Technologies AGIGBT, 600V, 31A, TO-220
    RoHS: Compliant    		773
    • 5000:$2.6700
    • 2000:$2.7700
    • 1000:$2.9100
    • 500:$3.4500
    • 250:$3.8500
    • 100:$4.0400
    • 10:$4.6700
    • 1:$5.4900
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    可用性
    库存:
    939
    订购:
    2922
    输入数量:
    IRG4BC30FDPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.57
    US$3.57
    10
    US$3.03
    US$30.30
    100
    US$2.63
    US$263.00
    250
    US$2.50
    US$625.00
    500
    US$2.24
    US$1 120.00
    1000
    US$1.89
    US$1 890.00
    2000
    US$1.80
    US$3 600.00
    5000
    US$1.73
    US$8 650.00
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