FCP190N60E

Mfr. #:: FCP190N60E
制造商:: ON Semiconductor
描述:: MOSFET N-CH 600V TO220-3
生命周期:: 制造商新产品。
数据表:: FCP190N60E 数据表
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更多信息:: FCP190N60E 更多信息

产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 管子

单位重量: 0.063493 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

钯功耗: 208 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 14 ns

Id 连续漏极电流: 20.6 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 190 mOhms

晶体管极性: N通道

典型关断延迟时间: 101 ns

典型开启延迟时间: 23 ns

Qg-门电荷: 63 nC

Tags: FCP190N60, FCP190, FCP19, FCP1, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP190N60E 描述

***Semiconductor: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220

***Components: In a Pack of 2, N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP190N60E

***ure Electronics: Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3

***p One Stop Global: Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 600V, 20.6A, TO-220

***i-Key: MOSFET N-CH 600V TO-220-3

***ment14 APAC: MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCP190N60E 更多信息

SuperFET® II Power MOSFETs: ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More

Industrial Power Solutions: ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More

Market price

型号	制造商	描述	库存	价格
FCP190N60E DISTI # V99:2348_06359354	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail	800	8000000:$1.2610 80000:$1.4240 800:$1.7330
FCP190N60E DISTI # FCP190N60E-ND	ON Semiconductor	MOSFET N-CH 600V TO220-3 RoHS: Compliant Min Qty: 800 Container: Tube	Temporarily Out of Stock	800:$1.7325
FCP190N60E DISTI # 31262210	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail	800	5:$1.7330
FCP190N60E DISTI # FCP190N60E	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP190N60E) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$1.2900 1600:$1.2900 3200:$1.2900 4800:$1.2900 8000:$1.1900
FCP190N60E DISTI # FCP190N60E	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP190N60E) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.7900 10:€1.5900 25:€1.4900 50:€1.3900 100:€1.3900 500:€1.2900 1000:€1.2900
FCP190N60E DISTI # 512-FCP190N60E	ON Semiconductor	MOSFET 600V N-CHAN MOSFET RoHS: Compliant	0	1:$2.7800 10:$2.3700 100:$2.0500 250:$1.9500 500:$1.7500
FCP190N60E DISTI # 7729102P	ON Semiconductor	MOSFET N-CH 600V 20A SUPERFET-II TO220, TU	10	20:£1.3700
FCP190N60E	ON Semiconductor	600 V N-CHANNEL MOSFET RoHS: Compliant	Europe - 400
FCP190N60E DISTI # C1S541901518194	ON Semiconductor	Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	800	800:$1.7330
FCP190N60E DISTI # 2254234	ON Semiconductor	MOSFET, N-CH, 600V, 20.6A, TO-220 RoHS: Compliant	0	1:£2.8400 25:£2.5600 100:£2.4100 250:£2.2800 500:£2.1000

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