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BSC190N15NS3GATMA1

BSC190N15NS3GATMA1
Mfr. #:
BSC190N15NS3GATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
生命周期:
制造商新产品。
数据表:
BSC190N15NS3GATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TDSON-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
150 V
Id - 连续漏极电流：
50 A
Rds On - 漏源电阻：
19 mOhms
Vgs th - 栅源阈值电压：
2 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
23 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
125 W
配置：
单身的
频道模式：
增强
商品名：
优化MOS
打包：
卷轴
高度：
1.27 mm
长度：
5.9 mm
系列：
OptiMOS 3
晶体管类型：
1 N-Channel
宽度：
5.15 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
29 S
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
53 ns
出厂包装数量：
5000
子类别：
MOSFET
典型关断延迟时间：
25 ns
典型的开启延迟时间：
15 ns
第 # 部分别名：
BSC190N15NS3 BSC19N15NS3GXT G SP000416636
单位重量：
0.003527 oz
Tags
BSC190N15NS3G, BSC190N15NS3, BSC190N15, BSC190N1, BSC190, BSC19, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 150 V 19 mOhm 23 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:150V; On Resistance
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***(Formerly Allied Electronics)
Fairchild FDMS86200 N-channel MOSFET Transistor; 52 A; 150 V; 8-Pin Power 56
***emi
N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ
***ure Electronics
N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56
***r Electronics
Power Field-Effect Transistor, 9.6A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
MOSFET, N CH, 150V, 35A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ure Electronics
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; N-Channel; 150V; 56A; 31 mOhm; 33 nC Qg; PQFN
*** Source Electronics
Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ure Electronics
N-Channel 150 V 18 mOhm 104 W TrenchFET Power MosFet - PowerPAK SO-8
***et
Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R
***el Electronic
MOSFET 150volt 18mOhms@10V 53.7A N-Ch T-FET
***nell
MOSFET, N-CH, 150V, 53.7A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 53.7A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0148ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ponent Sense
MOSFET FDMS86200 N 0.019R 150V 35A
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN
***ment14 APAC
MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 150 V 34.5 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ineon
Target Applications: Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ark
N CHANNEL MOSFET, 150V, 6.2mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.2mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.0029ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
***ure Electronics
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***Yang
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***sible Micro
XTR,PWR,MFT,FDB2552,D2PK 150V,37A,N-CHNL MOSFET RDS(on)=36 mOHM,TO-263AB
***r Electronics
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
型号 制造商 描述 库存 价格
BSC190N15NS3GATMA1
DISTI # V72:2272_06382989		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		1678
  • 75000:$1.1810
  • 30000:$1.2030
  • 15000:$1.2240
  • 6000:$1.2460
  • 3000:$1.2669
  • 1000:$1.2890
  • 500:$1.3170
  • 250:$1.3490
  • 100:$1.4990
  • 50:$1.6350
  • 25:$1.8170
  • 10:$1.8380
  • 1:$2.1629
BSC190N15NS3GATMA1
DISTI # BSC190N15NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.3355
BSC190N15NS3GATMA1
DISTI # BSC190N15NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.5343
  • 500:$1.8517
  • 100:$2.3808
  • 10:$2.9630
  • 1:$3.2800
BSC190N15NS3GATMA1
DISTI # BSC190N15NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 50A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.5343
  • 500:$1.8517
  • 100:$2.3808
  • 10:$2.9630
  • 1:$3.2800
BSC190N15NS3GATMA1
DISTI # 30667064		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		1678
  • 5:$2.1629
BSC190N15NS3GATMA1
DISTI # BSC190N15NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 50A 8-Pin TDSON EP - Tape and Reel (Alt: BSC190N15NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.1900
  • 50000:$1.0900
BSC190N15NS3GATMA1
DISTI # 79X1336		Infineon Technologies AGMOSFET, N-CH, 150V, 50A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$2.7500
  • 10:$2.3400
  • 25:$2.1800
  • 50:$2.0300
  • 100:$1.8700
  • 250:$1.7600
  • 500:$1.6400
  • 1000:$1.3600
BSC190N15NS3 G
DISTI # 726-BSC190N15NS3G		Infineon Technologies AGMOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
BSC190N15NS3GATMA1
DISTI # 726-BSC190N15NS3GATM		Infineon Technologies AGMOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
BSC190N15NS3GATMA1
DISTI # 7545317P		Infineon Technologies AGMOSFET N-CHANNEL 150V 50A TDSON8, RL2500
  • 50:£1.3700
  • 250:£1.1500
  • 1250:£0.9250
  • 2500:£0.9000
BSC190N15NS3GATMA1
DISTI # 7545317		Infineon Technologies AGMOSFET N-CHANNEL 150V 50A TDSON8, PK94
  • 2:£1.9600
  • 50:£1.3700
  • 250:£1.1500
  • 1250:£0.9250
  • 2500:£0.9000
BSC190N15NS3GATMA1
DISTI # 2432711		Infineon Technologies AGMOSFET, N CH, 150V, 50A, TDSON-8
RoHS: Compliant		0
  • 1:£2.0000
  • 10:£1.4000
  • 100:£1.2900
  • 250:£1.1700
  • 500:£1.0400
BSC190N15NS3GATMA1
DISTI # 2432711RL		Infineon Technologies AGMOSFET, N CH, 150V, 50A, TDSON-8
RoHS: Compliant		0
  • 1:$4.3500
  • 10:$3.7100
  • 100:$2.9700
  • 500:$2.6000
  • 1000:$2.1600
  • 2500:$2.0100
  • 5000:$1.9400
BSC190N15NS3GATMA1
DISTI # 2432711		Infineon Technologies AGMOSFET, N CH, 150V, 50A, TDSON-8
RoHS: Compliant		0
  • 1:$4.3500
  • 10:$3.7100
  • 100:$2.9700
  • 500:$2.6000
  • 1000:$2.1600
  • 2500:$2.0100
  • 5000:$1.9400
BSC190N15NS3GATMA1
DISTI # C1S322000210970		Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		1678
  • 100:$1.4990
  • 50:$1.6350
  • 25:$1.8170
  • 10:$1.8380
  • 1:$2.1629
图片 型号 描述
BSC220N20NSFDATMA1

Mfr.#: BSC220N20NSFDATMA1

OMO.#: OMO-BSC220N20NSFDATMA1

 MOSFET
CRCW040222K1FKEDC

Mfr.#: CRCW040222K1FKEDC

OMO.#: OMO-CRCW040222K1FKEDC

 Thick Film Resistors - SMD 1/16W 22.1Kohms 1% Commercial Use
CRCW04021K00FKEDC

Mfr.#: CRCW04021K00FKEDC

OMO.#: OMO-CRCW04021K00FKEDC

 Thick Film Resistors - SMD 1/16watt 1Kohms 1% Commercial Use
CRCW060310R0FKEAC

Mfr.#: CRCW060310R0FKEAC

OMO.#: OMO-CRCW060310R0FKEAC

 Thick Film Resistors - SMD 1/10Watt 10ohms 1% Commercial Use
CRCW04022M00FKEDC

Mfr.#: CRCW04022M00FKEDC

OMO.#: OMO-CRCW04022M00FKEDC

 Thick Film Resistors - SMD 1/16watt 2Mohms 1% Commercial Use
UCC28056DBVR

Mfr.#: UCC28056DBVR

OMO.#: OMO-UCC28056DBVR

 Power Factor Correction - PFC 6-pin high performance CRM/DCM PFC controller 6-SOT-23 -40 to 125
CRCW040247K5FKEDC

Mfr.#: CRCW040247K5FKEDC

OMO.#: OMO-CRCW040247K5FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 47K5 1% ET7
CRCW040222K1FKEDC

Mfr.#: CRCW040222K1FKEDC

OMO.#: OMO-CRCW040222K1FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 22K1 1% ET7
CRCW0402100RFKEDC

Mfr.#: CRCW0402100RFKEDC

OMO.#: OMO-CRCW0402100RFKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 100R 1% ET7
CRCW060310R0FKEAC

Mfr.#: CRCW060310R0FKEAC

OMO.#: OMO-CRCW060310R0FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 10R 1% ET1
可用性
库存:
Available
订购:
1992
输入数量:
BSC190N15NS3GATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.74
US$2.74
10
US$2.33
US$23.30
100
US$1.86
US$186.00
500
US$1.63
US$815.00
1000
US$1.35
US$1 350.00
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