SI2356DS-T1-GE3

Name: Vishay - SI2356DS-T1-GE3
Brand: Vishay
SKU: OMO-2860839
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI2356DS-T1-GE3
制造商:: Vishay
描述:: MOSFET N-CH 40V 4.3A SOT-23
生命周期:: 制造商新产品。
数据表:: SI2356DS-T1-GE3 数据表
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更多信息:: SI2356DS-T1-GE3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

单位重量: 0.050717 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: TO-236-3, SC-59, SOT-23-3

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: TO-236

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.7W

晶体管型: 1 N-Channel

漏源电压 Vdss: 40V

输入电容-Ciss-Vds: 370pF @ 20V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 4.3A (Tc)

Rds-On-Max-Id-Vgs: 51 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 13nC @ 10V

钯功耗: 1.7 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 53 ns

上升时间: 52 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 4.3 A

Vds-漏-源-击穿电压: 40 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 56 mOhms

晶体管极性: N通道

典型关断延迟时间: 18 ns

典型开启延迟时间: 10 ns

Qg-门电荷: 8.1 nC

正向跨导最小值: 13 S

Tags: SI235, SI23, SI2

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

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SI2356DS-T1-GE3 描述

***ure Electronics: Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R

***ark: N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V

***et: N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V

***i-Key: MOSFET N-CH 40V 4.3A SOT-23

***ronik: N-CHANNEL-FET 4,3A 40V SOT23

***ied Electronics & Automation: 40V .051ohm@10V 4.3A N-Ch T-FET

***: P-CHANNEL 40-V (D-S)

***ment14 APAC: MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)

SI2356DS-T1-GE3 更多信息

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

型号	制造商	描述	库存	价格
SI2356DS-T1-GE3 DISTI # V72:2272_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	1000:$0.1356 500:$0.1789 250:$0.2021 100:$0.2246 25:$0.3306 10:$0.3674 1:$0.5266
SI2356DS-T1-GE3 DISTI # V36:1790_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	87000In Stock	75000:$0.0890 30000:$0.0925 15000:$0.1008 6000:$0.1077 3000:$0.1147
SI2356DS-T1-GE3 DISTI # 32318889	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	76:$0.5266
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 6000	1500:$0.0988 750:$0.1018 375:$0.1051 188:$0.1085 94:$0.1122 47:$0.1161 1:$0.1204
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	30000:€0.0859 18000:€0.0929 12000:€0.0999 6000:€0.1169 3000:€0.1709
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0839 18000:$0.0869 12000:$0.0889 6000:$0.0929 3000:$0.0959
SI2356DS-T1-GE3 DISTI # 05AC9483	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	27000	1:$0.1370 3000:$0.1370
SI2356DS-T1-GE3 DISTI # 01AC4982	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	8890	1000:$0.1550 500:$0.1960 250:$0.2340 100:$0.2720 50:$0.3280 25:$0.3830 1:$0.4810
SI2356DS-T1-GE3 DISTI # 70459514	Vishay Siliconix	40V .051ohm@10V 4.3A N-Ch T-FET RoHS: Compliant	0	25:$0.1880 250:$0.1790 500:$0.1700 750:$0.1610 1000:$0.1340
SI2356DS-T1-GE3 DISTI # 78-SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	76574	1:$0.4300 10:$0.2930 100:$0.1970 500:$0.1580 1000:$0.1190 3000:$0.1090 6000:$0.1020 9000:$0.0950 24000:$0.0880
SI2356DS-T1-GE3 DISTI # TMOSS6841	Vishay Intertechnologies	N-CHANNEL-FET 4,3A 40V SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1301 6000:$0.1226 12000:$0.1152 18000:$0.1041 24000:$0.1003
SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	Americas - 54000
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23	15000	9000:£0.0763 3000:£0.0889
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	15000	12000:$0.1260 9000:$0.1300 6000:$0.1310 3000:$0.1350
SI2356DS-T1-GE3 DISTI # 2646369	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	8230	1000:$0.1950 500:$0.2590 100:$0.3460 10:$0.5080 1:$0.6300

SI2356DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes