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FCP380N60E

FCP380N60E
Mfr. #:
FCP380N60E
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-CHAN MOSFET
生命周期:
制造商新产品。
数据表:
FCP380N60E 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FCP380N60E 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
10.2 A
Rds On - 漏源电阻：
380 mOhms
Pd - 功耗：
106 W
配置：
单身的
商品名：
超级场效应晶体管 II
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FCP380N60E
晶体管类型：
1 N-Channel
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
MOSFET
出厂包装数量：
800
子类别：
MOSFET
单位重量：
0.063493 oz
Tags
FCP380N60E, FCP38, FCP3, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 10.2A, 380mΩ, TO-220
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Tube
***Components
MOSFET N-CH 600V 10A SUPERFET-II TO220
***ark
MOSFET, N-CH, 600V, 10.2A, TO-220
***i-Key
MOSFET N-CH 600V TO-220-3
***ment14 APAC
MOSFET, N-CH, 600V, 10.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:106W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
型号 制造商 描述 库存 价格
FCP380N60E
DISTI # V79:2366_17784644		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail675
  • 1600:$0.8206
  • 800:$0.9272
  • 100:$1.0163
  • 10:$1.1689
  • 1:$1.2857
FCP380N60E
DISTI # FCP380N60E-ND		ON SemiconductorMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		190In Stock
  • 1600:$1.1643
  • 800:$1.2687
  • 100:$1.8068
  • 10:$2.2480
  • 1:$2.4900
FCP380N60E
DISTI # 26114494		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail675
  • 100:$1.0163
  • 18:$1.1689
FCP380N60E
DISTI # FCP380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP380N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$0.9539
  • 1600:$0.9479
  • 3200:$0.9349
  • 4800:$0.9239
  • 8000:$0.9009
FCP380N60E
DISTI # 512-FCP380N60E		ON SemiconductorMOSFET 600V N-CHAN MOSFET
RoHS: Compliant		802
  • 1:$2.1500
  • 10:$1.8300
  • 100:$1.4600
  • 500:$1.2800
  • 1000:$1.0600
  • 2500:$0.9860
  • 5000:$0.9500
FCP380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant		26966
  • 1000:$1.1900
  • 500:$1.2500
  • 100:$1.3100
  • 25:$1.3600
  • 1:$1.4700
FCP380N60E
DISTI # C1S541901387479		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		675
  • 100:$1.0163
  • 10:$1.1689
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可用性
库存:
792
订购:
2775
输入数量:
FCP380N60E的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$1.93
US$1.93
10
US$1.64
US$16.40
100
US$1.31
US$131.00
500
US$1.15
US$575.00
1000
US$0.95
US$953.00
2500
US$0.89
US$2 217.50
5000
US$0.86
US$4 275.00
10000
US$0.82
US$8 220.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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