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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSZ088N03MSGATMA1 DISTI # V36:1790_06390945 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP T/R RoHS: Compliant | 0 |
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| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 7743In Stock |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 7743In Stock |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSZ088N03MSGATMA1 DISTI # SP000311509 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP (Alt: SP000311509) RoHS: Compliant Min Qty: 5000 | Europe - 5000 |
|
| BSZ088N03MSG DISTI # BSZ088N03MSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03MSG) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP - Bulk (Alt: BSZ088N03MSGATMA1) RoHS: Compliant Min Qty: 1471 Container: Bulk | Americas - 0 |
|
| BSZ088N03MSGATMA1 DISTI # BSZ088N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ088N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ088N03MS G DISTI # 726-BSZ088N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M RoHS: Compliant | 2840 |
|
| BSZ088N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 985 |
|
| BSZ088N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 40000 |
|
| BSZ088N03MS G | Infineon Technologies AG | 100 | ||
| BSZ088N03MS G | Infineon Technologies AG | 4682 | ||
| BSZ088N03MSGATMA1 DISTI # XSKDRABV0052176 | Infineon Technologies AG | RoHS: Compliant | 15000 in Stock0 on Order |
|
| BSZ088N03MSG | Infineon Technologies AG | 30V,8m,40A,N-Channel Power MOSFET | 3000 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: BSZ088N03LS G OMO.#: OMO-BSZ088N03LS-G |
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
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Mfr.#: BSZ088N03MS G OMO.#: OMO-BSZ088N03MS-G |
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |
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Mfr.#: BSZ088N03MSGATMA1 OMO.#: OMO-BSZ088N03MSGATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSZ088N03LS OMO.#: OMO-BSZ088N03LS-1190 |
全新原装 |
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Mfr.#: BSZ088N03LS G OMO.#: OMO-BSZ088N03LS-G-1190 |
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
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Mfr.#: BSZ088N03LSG OMO.#: OMO-BSZ088N03LSG-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03LSG) |
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Mfr.#: BSZ088N03LSGATMA1 |
MOSFET N-CH 30V 40A TSDSON-8 |
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Mfr.#: BSZ088N03MSGATMA1 , TFZV |
全新原装 |
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Mfr.#: BSZ088N03MSGATMA1 |
MOSFET N-CH 30V 40A TSDSON-8 |
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Mfr.#: BSZ088N03MS G OMO.#: OMO-BSZ088N03MS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |
