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IPD26N06S2L35ATMA2

IPD26N06S2L35ATMA2
Mfr. #:
IPD26N06S2L35ATMA2
制造商:
Infineon Technologies
描述:
MOSFET N-CH 55V 30A TO252-3
生命周期:
制造商新产品。
数据表:
IPD26N06S2L35ATMA2 数据表
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产品属性
属性值
Tags
IPD26N06S2L3, IPD26N, IPD26, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 55 V 35 mOhm OptiMOS® Power-Transistor - PG-TO252-3-11
***ical
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 55V 30A TO252-3
***ronik
N-CH 55V 30A 35mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 55V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 55V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:68W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
型号 制造商 描述 库存 价格
IPD26N06S2L35ATMA2
DISTI # V72:2272_06391037		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R2030
  • 1000:$0.2814
  • 500:$0.3025
  • 250:$0.3361
  • 100:$0.3734
  • 25:$0.5571
  • 10:$0.6275
  • 1:$0.7607
IPD26N06S2L35ATMA2
DISTI # V36:1790_06391037		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R0
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2CT-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2297In Stock
    • 1000:$0.3241
    • 500:$0.4051
    • 100:$0.5125
    • 10:$0.6680
    • 1:$0.7600
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2DKR-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2297In Stock
    • 1000:$0.3241
    • 500:$0.4051
    • 100:$0.5125
    • 10:$0.6680
    • 1:$0.7600
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2TR-ND    		Infineon Technologies AGMOSFET N-CH 55V 30A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 25000:$0.2491
    • 12500:$0.2557
    • 5000:$0.2655
    • 2500:$0.2852
    IPD26N06S2L35ATMA2
    DISTI # 30285979    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R2030
    • 27:$0.7607
    IPD26N06S2L35ATMA2
    DISTI # SP001063630    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R (Alt: SP001063630)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 12500
    • 25000:€0.3189
    • 15000:€0.3439
    • 10000:€0.3719
    • 5000:€0.4059
    • 2500:€0.4969
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Bulk (Alt: IPD26N06S2L35ATMA2)
    RoHS: Compliant
    Min Qty: 1471
    Container: Bulk    		Americas - 0
    • 14710:$0.2159
    • 7355:$0.2189
    • 4413:$0.2269
    • 2942:$0.2359
    • 1471:$0.2439
    IPD26N06S2L35ATMA2
    DISTI # IPD26N06S2L35ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD26N06S2L35ATMA2)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.3339
    • 15000:$0.3399
    • 10000:$0.3519
    • 5000:$0.3649
    • 2500:$0.3789
    IPD26N06S2L35ATMA2
    DISTI # 34AC1668    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes5686
    • 1000:$0.3030
    • 500:$0.3280
    • 250:$0.3540
    • 100:$0.3790
    • 50:$0.4480
    • 25:$0.5170
    • 10:$0.5870
    • 1:$0.7070
    IPD26N06S2L35ATMA2
    DISTI # 726-IPD26N06S2L35ATM    		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
    RoHS: Compliant    		4900
    • 1:$0.7000
    • 10:$0.5810
    • 100:$0.3750
    • 1000:$0.3000
    • 2500:$0.2530
    IPD26N06S2L35ATMA2Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    RoHS: Compliant    		405000
    • 1000:$0.2200
    • 500:$0.2400
    • 100:$0.2500
    • 25:$0.2600
    • 1:$0.2800
    IPD26N06S2L35ATMA2
    DISTI # 2781080    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-2525726
    • 500:£0.2240
    • 250:£0.2550
    • 100:£0.2860
    • 10:£0.4900
    • 1:£0.6110
    IPD26N06S2L35ATMA2
    DISTI # 2781080    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
    RoHS: Compliant    		5641
    • 5000:$0.3860
    • 1000:$0.4070
    • 500:$0.4310
    • 250:$0.4970
    • 100:$0.5890
    • 25:$0.7210
    • 5:$0.8280
    IPD26N06S2L35ATMA2
    DISTI # XSKDRABV0048049    		Infineon Technologies AGSmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon
    RoHS: Compliant    		10000 in Stock0 on Order
    • 10000:$0.4707
    • 2500:$0.5043
    图片 型号 描述
    IPD26N06S2L35ATMA2

    Mfr.#: IPD26N06S2L35ATMA2

    OMO.#: OMO-IPD26N06S2L35ATMA2

    		 MOSFET N-CHANNEL_55/60V
    IPD26N06S2L35ATMA1

    Mfr.#: IPD26N06S2L35ATMA1

    OMO.#: OMO-IPD26N06S2L35ATMA1

    		 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
    IPD26N06S2L35ATMA1

    Mfr.#: IPD26N06S2L35ATMA1

    OMO.#: OMO-IPD26N06S2L35ATMA1-INFINEON-TECHNOLOGIES

    		 Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R
    IPD26N06S2L-35

    Mfr.#: IPD26N06S2L-35

    OMO.#: OMO-IPD26N06S2L-35-1190

    		 MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
    IPD26N06S2L35

    Mfr.#: IPD26N06S2L35

    OMO.#: OMO-IPD26N06S2L35-1190

    		 SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon
    IPD26N06S2L35ATMA2

    Mfr.#: IPD26N06S2L35ATMA2

    OMO.#: OMO-IPD26N06S2L35ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 55V 30A TO252-3
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    IPD26N06S2L35ATMA2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
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