BLS6G3135-120,112

BLS6G3135-120,112
Mfr. #:
BLS6G3135-120,112
制造商:
Ampleon USA Inc
描述:
RF MOSFET Transistors LDMOS TNS
生命周期:
制造商新产品。
数据表:
BLS6G3135-120,112 数据表
交货:
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ECAD Model:
产品属性
属性值
Tags
BLS6G3135-1, BLS6G3, BLS6, BLS
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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 3.1 to 3.5 GHz, 120 W, 11 dB, 32 V, LDMOS, SOT-502A
***et
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
*** Americas
LDMOS S-Band radar power transistor
***ark
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation Pd:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes
型号 制造商 描述 库存 价格
BLS6G3135-120,112
DISTI # BLS6G3135-120,112-ND
AmpleonRF FET LDMOS 60V 11DB SOT502A
RoHS: Compliant
Min Qty: 20
Container: Tray
Temporarily Out of Stock
  • 20:$328.9970
BLS6G3135-120,112
DISTI # 70R2902
AmpleonN CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes0
    图片 型号 描述
    BLS6G3135-120

    Mfr.#: BLS6G3135-120

    OMO.#: OMO-BLS6G3135-120-1152

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    BLS6G3135-120112

    Mfr.#: BLS6G3135-120112

    OMO.#: OMO-BLS6G3135-120112-1190

    全新原装
    BLS6G3135-20

    Mfr.#: BLS6G3135-20

    OMO.#: OMO-BLS6G3135-20-1190

    全新原装
    BLS6G3135-20112

    Mfr.#: BLS6G3135-20112

    OMO.#: OMO-BLS6G3135-20112-1190

    Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120112

    Mfr.#: BLS6G3135S-120112

    OMO.#: OMO-BLS6G3135S-120112-1190

    BLS6G3135S-120/SOT502/TRAY
    BLS6G3135S-20

    Mfr.#: BLS6G3135S-20

    OMO.#: OMO-BLS6G3135S-20-1190

    全新原装
    BLS6G3135-120,112

    Mfr.#: BLS6G3135-120,112

    OMO.#: OMO-BLS6G3135-120-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    BLS6G3135S-120,112

    Mfr.#: BLS6G3135S-120,112

    OMO.#: OMO-BLS6G3135S-120-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
    BLS6G3135S-20,112

    Mfr.#: BLS6G3135S-20,112

    OMO.#: OMO-BLS6G3135S-20-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
    BLS6G3135-20,112

    Mfr.#: BLS6G3135-20,112

    OMO.#: OMO-BLS6G3135-20-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    BLS6G3135-120,112的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$493.50
    US$493.50
    10
    US$468.82
    US$4 688.21
    100
    US$444.15
    US$44 414.60
    500
    US$419.47
    US$209 735.60
    1000
    US$394.80
    US$394 796.40
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