AUIRL1404ZSTRL

AUIRL1404ZSTRL
Mfr. #:
AUIRL1404ZSTRL
制造商:
Infineon Technologies
描述:
MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
生命周期:
制造商新产品。
数据表:
AUIRL1404ZSTRL 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-263-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
40 V
Id - 连续漏极电流:
180 A
Rds On - 漏源电阻:
5.9 mOhms
Vgs - 栅源电压:
16 V
Qg - 门电荷:
75 nC
最低工作温度:
- 55 C
Pd - 功耗:
200 W
配置:
单身的
频道模式:
增强
资质:
AEC-Q101
打包:
卷轴
高度:
4.4 mm
长度:
10 mm
晶体管类型:
1 N-Channel
宽度:
9.25 mm
品牌:
英飞凌科技
秋季时间:
49 ns
产品类别:
MOSFET
上升时间:
180 ns
出厂包装数量:
800
子类别:
MOSFET
典型关断延迟时间:
30 ns
典型的开启延迟时间:
19 ns
第 # 部分别名:
SP001518266
单位重量:
0.139332 oz
Tags
AUIRL1404ZST, AUIRL1404ZS, AUIRL1404Z, AUIRL1, AUIRL, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
AUIRL1404ZS N-channel MOSFET Transistor; 180 A; 40 V; 4-Pin D2PAK
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.1pF 50Volts C0G +/-0.1pF
***ark
MOSFET,W DIODE,N CH,40V,160A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating ;RoHS Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 208 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 68 / Turn-OFF Delay Time ns = 115 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 208
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3
***nell
MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 193A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 40 V 2.3 mOhm 107 nC Automotive HEXFET® Power Mosfet - D2PAK
***nell
MOSFET, 40V, 120A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package
***el Electronic
Ceramic Capacitors 1000pF Radial, Disc ±10% B Bulk 1 (Unlimited) General Purpose Through Hole -25°C~105°C CAP CER 1000PF 2KV RADIAL
***ow.cn
Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK
***ure Electronics
Single P-Channel 40 V 4 mOhm 375 W SMT Automotive Power Mosfet - TO-263
***ark
P-Channel 40-V (D-S) 175C Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, P-CH, 40V, 120A, 175DEG C, 375W;
***S
MOSFET P-CHANNEL 40V 120V TO-263
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel
***icroelectronics
N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package
***ca Corp
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 40V 120A 3-Pin H2PAK-2 T/R
***(Formerly Allied Electronics)
MOSFET 40V 0.032 / 0.046 OHM LL
***icroelectronics SCT
Power MOSFETs, 40V, 160A, H2PAK-2, Tape and Reel
***S
French Electronic Distributor since 1988
型号 制造商 描述 库存 价格
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL-ND
Infineon Technologies AGMOSFET N-CH 40V 160A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$1.9813
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL
Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRL1404ZSTRL)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
AUIRL1404ZSTRL
DISTI # SP001518266
Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001518266)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.5900
  • 1600:€1.5900
  • 3200:€1.4900
  • 4800:€1.3900
  • 8000:€1.2900
AUIRL1404ZSTRL
DISTI # 942-AUIRL1404ZSTRL
Infineon Technologies AGMOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
RoHS: Compliant
0
  • 1:$3.1800
  • 10:$2.7100
  • 100:$2.3500
  • 250:$2.2300
  • 500:$2.0000
  • 800:$1.6900
  • 2400:$1.6000
  • 4800:$1.5400
图片 型号 描述
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z

MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL

MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S

MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404ZS

Mfr.#: AUIRL1404ZS

OMO.#: OMO-AUIRL1404ZS-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404STRL

Mfr.#: AUIRL1404STRL

OMO.#: OMO-AUIRL1404STRL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A D2PAK
AUIRL1404ZSTRLPBF

Mfr.#: AUIRL1404ZSTRLPBF

OMO.#: OMO-AUIRL1404ZSTRLPBF-1190

全新原装
AUIRL1404ZL

Mfr.#: AUIRL1404ZL

OMO.#: OMO-AUIRL1404ZL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A TO262
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A D2PAK
可用性
库存:
800
订购:
2783
输入数量:
AUIRL1404ZSTRL的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$3.18
US$3.18
10
US$2.71
US$27.10
100
US$2.35
US$235.00
250
US$2.23
US$557.50
500
US$2.00
US$1 000.00
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