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IPD60R450E6ATMA1

IPD60R450E6ATMA1
Mfr. #:
IPD60R450E6ATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 9.2A DPAK-2
生命周期:
制造商新产品。
数据表:
IPD60R450E6ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
配置：
单身的
商品名：
酷摩
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
系列：
CoolMOS E6
晶体管类型：
1 N-Channel
宽度：
6.22 mm
品牌：
英飞凌科技
产品类别：
MOSFET
出厂包装数量：
2500
子类别：
MOSFET
第 # 部分别名：
IPD60R450E6ATMA1 SP001117720
单位重量：
0.139332 oz
Tags
IPD60R45, IPD60R4, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 9.2A 3-Pin(2+Tab) TO-252
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 9.2A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
型号 制造商 描述 库存 价格
IPD60R450E6ATMA1
DISTI # IPD60R450E6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 9.2A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R450E6ATMA1
    DISTI # IPD60R450E6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 9.2A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD60R450E6ATMA1
      DISTI # IPD60R450E6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 9.2A TO252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD60R450E6ATMA1
        DISTI # IPD60R450E6ATMA1        		Infineon Technologies AGTrans MOSFET N-CH 650V 9.2A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R450E6ATMA1)
        Min Qty: 472
        Container: Bulk        		Americas - 0
        • 4720:$0.6729
        • 2360:$0.6849
        • 1416:$0.7089
        • 944:$0.7359
        • 472:$0.7629
        IPD60R450E6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Compliant        		20
        • 1000:$0.7000
        • 500:$0.7300
        • 100:$0.7600
        • 25:$0.8000
        • 1:$0.8600
        IPD60R450E6ATMA1
        DISTI # 2480834RL        		Infineon Technologies AGMOSFET, N-CH, 600V, 9.2A, TO-252-3
        RoHS: Compliant        		0
        • 5000:$1.0500
        • 2500:$1.1100
        • 1000:$1.1700
        • 500:$1.3500
        • 100:$1.6000
        • 10:$1.9600
        • 1:$2.2500
        IPD60R450E6ATMA1
        DISTI # 2480834        		Infineon Technologies AGMOSFET, N-CH, 600V, 9.2A, TO-252-3
        RoHS: Compliant        		0
        • 5000:$1.0500
        • 2500:$1.1100
        • 1000:$1.1700
        • 500:$1.3500
        • 100:$1.6000
        • 10:$1.9600
        • 1:$2.2500
        IPD60R450E6ATMA1
        DISTI # 2480834        		Infineon Technologies AGMOSFET, N-CH, 600V, 9.2A, TO-252-35
        • 100:£0.9750
        • 25:£1.2200
        • 5:£1.3500
        图片 型号 描述
        IPD60R450E6ATMA1

        Mfr.#: IPD60R450E6ATMA1

        OMO.#: OMO-IPD60R450E6ATMA1

        		 MOSFET N-Ch 650V 9.2A DPAK-2
        IPD60R450E6BTMA1

        Mfr.#: IPD60R450E6BTMA1

        OMO.#: OMO-IPD60R450E6BTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 600V 9.2A TO252
        IPD60R450E6

        Mfr.#: IPD60R450E6

        OMO.#: OMO-IPD60R450E6-1190

        		 MOSFET N-Ch 650V 9.2A DPAK-2 CoolMOS E6
        IPD60R450E6ATMA1

        Mfr.#: IPD60R450E6ATMA1

        OMO.#: OMO-IPD60R450E6ATMA1-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET N-Ch 650V 9.2A DPAK-2
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        IPD60R450E6ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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