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PSMN1R5-30BLEJ

PSMN1R5-30BLEJ
Mfr. #:
PSMN1R5-30BLEJ
制造商:
Nexperia
描述:
MOSFET N-CH 30V 120A D2PAK
生命周期:
制造商新产品。
数据表:
PSMN1R5-30BLEJ 数据表
交货:
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ECAD Model:
更多信息:
PSMN1R5-30BLEJ 更多信息
产品属性
属性值
制造商
恩智浦半导体
产品分类
FET - 单
系列
-
打包
Digi-ReelR 替代包装
单位重量
0.139332 oz
安装方式
贴片/贴片
包装盒
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
技术
硅
工作温度
-55°C ~ 175°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
D2PAK
配置
单身的
FET型
MOSFET N 沟道，金属氧化物
最大功率
401W
晶体管型
1 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
14934pF @ 15V
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
栅极电荷-Qg-Vgs
228nC @ 10V
钯功耗
401 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
99.2 ns
上升时间
156.1 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
30 V
VGS-th-Gate-Source-Threshold-Voltage
1.7 V
Rds-On-Drain-Source-Resistance
1.3 mOhms
晶体管极性
N通道
典型关断延迟时间
191.8 ns
典型开启延迟时间
100.6 ns
Qg-门电荷
228 nC
通道模式
增强
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
***ure Electronics
Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package
***p One Stop Japan
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 30V D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
型号 制造商 描述 库存 价格
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # V72:2272_06540853    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-1-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-6-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-2-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 800
      Container: Tape & Reel (TR)      		On Order
      • 1600:$1.4430
      • 800:$1.7110
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3854
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        图片 型号 描述
        PSMN1R5-40ES,127

        Mfr.#: PSMN1R5-40ES,127

        OMO.#: OMO-PSMN1R5-40ES-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115-NEXPERIA

        		 MOSFET N-CH 30V LFPAK
        PSMN1R5-25YL

        Mfr.#: PSMN1R5-25YL

        OMO.#: OMO-PSMN1R5-25YL-1190

        		 全新原装
        PSMN1R5-30BLE118

        Mfr.#: PSMN1R5-30BLE118

        OMO.#: OMO-PSMN1R5-30BLE118-1190

        		 Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R5-30YL115

        Mfr.#: PSMN1R5-30YL115

        OMO.#: OMO-PSMN1R5-30YL115-1190

        		 Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R5-30YLC.115

        Mfr.#: PSMN1R5-30YLC.115

        OMO.#: OMO-PSMN1R5-30YLC-115-1190

        		 Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115)
        PSMN1R5-30YLC115

        Mfr.#: PSMN1R5-30YLC115

        OMO.#: OMO-PSMN1R5-30YLC115-1190

        		 - Bulk (Alt: PSMN1R5-30YLC115)
        PSMN1R5-25YL,115

        Mfr.#: PSMN1R5-25YL,115

        OMO.#: OMO-PSMN1R5-25YL-115-NEXPERIA

        		 IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127-NEXPERIA

        		 MOSFET N-CH 40V 120A TO220AB
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        PSMN1R5-30BLEJ的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$1.86
        US$1.86
        10
        US$1.77
        US$17.70
        100
        US$1.68
        US$167.64
        500
        US$1.58
        US$791.65
        1000
        US$1.49
        US$1 490.20
        由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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