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SI8824EDB-T2-E1

SI8824EDB-T2-E1
Mfr. #:
SI8824EDB-T2-E1
制造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
生命周期:
制造商新产品。
数据表:
SI8824EDB-T2-E1 数据表
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HTML Datasheet:
SI8824EDB-T2-E1 DatasheetSI8824EDB-T2-E1 Datasheet (P4-P6)SI8824EDB-T2-E1 Datasheet (P7-P8)
ECAD Model:
更多信息:
SI8824EDB-T2-E1 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
MicroFoot-4
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
2.9 A
Rds On - 漏源电阻：
60 mOhms
Vgs th - 栅源阈值电压：
350 mV
Vgs - 栅源电压：
5 V
Qg - 门电荷：
6 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
900 mW
配置：
单身的
频道模式：
增强
商品名：
沟槽场效应晶体管
打包：
卷轴
高度：
0.65 mm
长度：
1.6 mm
系列：
SI8
晶体管类型：
1 N-Channel
宽度：
1.6 mm
品牌：
威世 / Siliconix
正向跨导 - 最小值：
11 S
秋季时间：
10 ns
产品类别：
MOSFET
上升时间：
20 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
17 ns
典型的开启延迟时间：
5 ns
Tags
Si8824, Si882, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
20V 2.1A 500mW 75m´Î@4.5V1A 800mV@250Ã×A N Channel XFBGA-4 MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R
***i-Key
MOSFET N-CH 20V 2.1A MICROFOOT
***ark
MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
***ure Electronics
N-Channel 20 V 56 mOhm Surface Mount Enhancement Mode Mosfet - SOT-323
***ical
Trans MOSFET N-CH 20V 2.8A Automotive 3-Pin SOT-323 T/R
***nell
MOSFET, N-CH, 20V, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 430mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***Yang
Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ
***ment14 APAC
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***p One Stop Global
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin SuperSOT T/R
***ure Electronics
Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
***r Electronics
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 0.045Ohm,ID 2.1A,TO-236 (SOT-23),PD 0.7W
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:2.1A; Resistance, Rds On:0.06ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.95V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:2.1A; Current, Idm Pulse:10A; No. of Pins:3; Power Dissipation:0.7W; Power Output:0.7W; Power, Pd:0.7W; Power, Ptot:0.7W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V N Channel:0.115ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.06ohm; Resistance, Rds on Max:0.06ohm; SMD Marking:2A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.65V; Width, Tape:8mm
***ure Electronics
Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23
***enic
20V 2.9A 57m´Î@4.5V3.6A 710mW 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ical
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
***ment14 APAC
N CHANNEL MOSFET, 20V, 2.9A, TO-236; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A;
***roFlash
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ
***Yang
Transistor MOSFET Array Dual N-CH 20V 2.7A 6-Pin TSOT-23 T/R - Product that comes on tape, but is no
***enic
20V 2.7A 80m¦¸@4.5V,2.7A 700mW 1.5V@250¦ÌA 2 N-Channel TSOT-23-6 MOSFETs ROHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.7A; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型号 制造商 描述 库存 价格
SI8824EDB-T2-E1
DISTI # V72:2272_14141675		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET5990
  • 3000:$0.1062
  • 1000:$0.1126
  • 500:$0.1596
  • 250:$0.1945
  • 100:$0.1986
  • 25:$0.2916
  • 10:$0.3239
  • 1:$0.4598
SI8824EDB-T2-E1
DISTI # V36:1790_14141675		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 6000000:$0.0952
  • 3000000:$0.0953
  • 600000:$0.1046
  • 60000:$0.1187
  • 6000:$0.1209
SI8824EDB-T2-E1
DISTI # SI8824EDB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 20V 2.1A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24728In Stock
  • 1000:$0.1359
  • 500:$0.1812
  • 100:$0.2416
  • 10:$0.3550
  • 1:$0.4400
SI8824EDB-T2-E1
DISTI # SI8824EDB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 20V 2.1A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24728In Stock
  • 1000:$0.1359
  • 500:$0.1812
  • 100:$0.2416
  • 10:$0.3550
  • 1:$0.4400
SI8824EDB-T2-E1
DISTI # SI8824EDB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 20V 2.1A MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 75000:$0.0938
  • 30000:$0.0975
  • 15000:$0.1063
  • 6000:$0.1136
  • 3000:$0.1209
SI8824EDB-T2-E1
DISTI # 27608806		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET5990
  • 3000:$0.1062
  • 1000:$0.1126
  • 500:$0.1596
  • 250:$0.1945
  • 100:$0.1986
  • 71:$0.2916
SI8824EDB-T2-E1
DISTI # SI8824EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R (Alt: SI8824EDB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1329
  • 18000:€0.1429
  • 12000:€0.1549
  • 6000:€0.1799
  • 3000:€0.2639
SI8824EDB-T2-E1
DISTI # SI8824EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8824EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.0889
  • 30000:$0.0909
  • 18000:$0.0939
  • 12000:$0.0979
  • 6000:$0.1009
SI8824EDB-T2-E1
DISTI # 49Y3696		Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R - Product that comes on tape, but is not reeled (Alt: 49Y3696)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.1580
SI8824EDB-T2-E1
DISTI # 49Y3696		Vishay IntertechnologiesMOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes0
  • 1000:$0.1270
  • 500:$0.1700
  • 250:$0.1900
  • 100:$0.2110
  • 50:$0.2620
  • 25:$0.3130
  • 1:$0.4550
SI8824EDB-T2-E1
DISTI # 49Y3697		Vishay IntertechnologiesMOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes0
  • 50000:$0.0900
  • 30000:$0.1000
  • 20000:$0.1080
  • 10000:$0.1210
  • 5000:$0.1390
  • 1:$0.1470
SI8824EDB-T2-E1
DISTI # 78-SI8824EDB-T2-E1		Vishay IntertechnologiesMOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant		15697
  • 1:$0.4500
  • 10:$0.3100
  • 100:$0.2090
  • 500:$0.1680
  • 1000:$0.1260
  • 3000:$0.1160
  • 6000:$0.1090
  • 9000:$0.1020
  • 24000:$0.0930
SI8824EDB-T2-E1
DISTI # 1807330		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET, RL6000
  • 3000:£0.0930
SI8824EDBT2E1Vishay Intertechnologies 
RoHS: Compliant		3000
    SI8824EDB-T2-E1
    DISTI # 2484054    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4
    RoHS: Compliant    		0
    • 1000:$0.2050
    • 500:$0.2730
    • 100:$0.3650
    • 10:$0.5350
    • 1:$0.6600
    SI8824EDB-T2-E1
    DISTI # 2484054    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4
    RoHS: Compliant    		10
    • 250:£0.2030
    • 100:£0.2240
    • 50:£0.2790
    • 25:£0.3320
    • 1:£0.4930
    SI8824EDB-T2-E1Vishay IntertechnologiesMOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		Americas -
      图片 型号 描述
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      		 Conn Board to Board PL 4Power/6Signal POS 0.4mm Solder ST SMD Embossed T/R - Tape and Reel (Alt: 5054761010)
      SI8817DB-T2-E1

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      GRJ155R60J106ME11D

      Mfr.#: GRJ155R60J106ME11D

      OMO.#: OMO-GRJ155R60J106ME11D-MURATA-ELECTRONICS

      		 CAP CER 10UF 6.3V X5R 0402
      AC0402KRX7R7BB104

      Mfr.#: AC0402KRX7R7BB104

      OMO.#: OMO-AC0402KRX7R7BB104-YAGEO

      		 Cap Ceramic 0.1uF 16V X7R 10% SMD 0402 125C Automotive T/R
      DA14585-00000AT2

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      OMO.#: OMO-DA14585-00000AT2-DIALOG-SEMICONDUCTOR

      		 IC RF TXRX+MCU BLUETOOTH 40VFQFN
      M24C32T-FCU6T/TF

      Mfr.#: M24C32T-FCU6T/TF

      OMO.#: OMO-M24C32T-FCU6T-TF-STMICROELECTRONICS

      		 EEPROM 32-Kbit serial I2C bus EEPROM 4 balls CSP
      可用性
      库存:
      15
      订购:
      1998
      输入数量:
      SI8824EDB-T2-E1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.45
      US$0.45
      10
      US$0.31
      US$3.10
      100
      US$0.21
      US$20.90
      500
      US$0.17
      US$84.00
      1000
      US$0.13
      US$126.00
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